SMUN5311DW1T3G
Low power consumption with a maximum power dissipation of 187mW
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.086 | $0.09 |
200 | $0.033 | $6.60 |
500 | $0.032 | $16.00 |
1000 | $0.031 | $31.00 |
在庫:7,019
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SMUN5311DW1T3G
-
パッケージ/ケース : 6-TSSOP
-
ブランド : onsemi
-
コンポーネントの分類 : Bipolar Transistor Arrays, Pre-Biased
-
日付シート : SMUN5311DW1T3G データシート (PDF)
概要 SMUN5311DW1T3G
The advantages of using the SMUN5311DW1T3G extend beyond its technical capabilities. By adopting this digital transistor series, companies can achieve significant cost reductions and enhance their competitive edge in the market. The incorporation of BRT technology represents a significant leap forward in transistor design, setting new standards for modern electronic applications
主な特長
- Safe operating range
- High temperature tolerance
- Durable physical design
応用
- Power Supply
- LED Indicator
- Programmable Controller
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10kOhms | Resistor - Emitter Base (R2) | 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V | Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA | Power - Max | 187mW |
Grade | Automotive | Qualification | AEC-Q101 |
Mounting Type | Surface Mount | Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 | Base Product Number | SMUN5311 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
SSM3J328R,LF
29.8m¦¸@4.5V,3A 1W 1V@1mA
ESM2030DV
High-power NPN silicon transistor designed for industrial applications
FGH40N60SMDF
Trans IGBT Chip N-CH 600V 80A 349W 3-Pin(3+Tab) TO-247 Tube
PSMN014-40YS,115
Nexperia PSMN014-40YS,115
PSMN015-100YLX
LFPAK56 packaged logic level MOSFET with 15mΩ on-resistance at 100V
PSMN020-100YS,115
37 mOhm Resistance
PSMN022-30PL,127
High-performance N-channel MOSFET engineered for logic-level circuits
PSMN039-100YS,115
Trans MOSFET N-CH 100V 28.1A 5-Pin(4+Tab) LFPAK T/R
PSMN1R4-40YLDX
With a maximum power dissipation of 238W and a threshold voltage of 2.2V at 1mA, this MOSFET is suitable for high-performance applications
PSMN1R9-40PLQ
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail
BTA06-600CRG
TRIAC 600V 6A(RMS) 63A 3-Pin(3+Tab) TO-220AB Tube
NSS20201LT1G
Small Signal NPN BJT
SI7960DP-T1-GE3
MOSFET substitution for SI7960DP-T1-GE3
IRF7102
Matched Pair N-Channel MOSFET Transistor SO
IRF3710SPBF
IRF3710SPBF, N-channel MOSFET Transistor 57 A 100 V, 3-Pin D2PAK
2SA1860
PNP 150V 6A 3-Pin TO-3PF Trans GP BJT
BUK7575-100A
TO-220AB plastic package with 3 pins
BDX54A
Compact W transistor perfect for power management system
FZ3600R17KE3
FZ3600R17KE3 is an Insulated Gate Bipolar Transistor with N-Channel configuration, capable of handling 4800A I(C) and 1700V V(BR)CES
BTA08-600BRG
TRIAC 600V 8A(RMS) 84A 3-Pin(3+Tab) TO-220AB Insulated Tube