SPP11N60CFD
N-Channel MOSFET Transistor description
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $5.429 | $5.43 |
200 | $2.101 | $420.20 |
500 | $2.028 | $1,014.00 |
1000 | $1.991 | $1,991.00 |
在庫:7,638
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : SPP11N60CFD
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パッケージ/ケース : TO-220-3
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : SPP11N60CFD データシート (PDF)
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Series : COOLMOS CFD
概要 SPP11N60CFD
With a current rating of 11A and a voltage rating of 600V, the SPP11N60CFD power field-effect transistor is a reliable choice for high-power applications. Its low on-state resistance of 0.44ohm ensures efficient operation and minimal power loss. The transistor is designed with one element and belongs to the N-channel, silicon, metal-oxide semiconductor FET family. Housed in a TO-220AB package with three pins, the transistor is easy to install and secure in place. The green plastic casing not only adds a pop of color to the component but also protects the internal circuitry from external elements
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | CoolMOS™ | Package | Tube |
Product Status | Obsolete | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 440mOhm @ 7A, 10V | Vgs(th) (Max) @ Id | 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 | Package / Case | TO-220-3 |
Base Product Number | SPP11N |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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