BSC010N04LS6ATMA1
BSC010N04LS6ATMA1 Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R
在庫:8,286
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSC010N04LS6ATMA1
-
パッケージ/ケース : PGTDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : BSC010N04LS6ATMA1 データシート (PDF)
-
Series : BSC010N04LS6
概要 BSC010N04LS6ATMA1
Infineon Technologies introduces the BSC010N04LS6ATMA1 power MOSFET, a high-performance N-channel transistor designed to excel in high-power applications. With an input voltage of 40V and a maximum continuous drain current of 100A, this MOSFET is engineered to deliver uncompromising performance in power management solutions. A member of the OptiMOS™ 6 power MOSFET family, it is characterized by its low on-state resistance and high efficiency, ensuring efficient power conversion and minimal power losses in electronic circuits. The BSC010N04LS6ATMA1 is distinguished by its low gate charge and fast switching speed, providing effective power management in various applications. Encased in a TO-263 (D2PAK) package type, this MOSFET offers exceptional thermal dissipation, making it an ideal choice for high-power environments. Additionally, it is RoHS compliant and meets industry standards for quality and reliability, underscoring its durability and safety in operation
主な特長
- High-speed data transmission enabled
- Real-time monitoring and control ensured
- Compact design with reduced footprint
- Improved fault tolerance guaranteed
応用
- Industrial motors
- DC-DC converters
- Power systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
functionalPacking | TAPE & REEL | addProductInfo | RoHS compliant, non dry |
packageNameMarketing | SuperSO8 FL | msl | 1 |
halogenFree | yes | customerInfo | STANDARD |
fgr | Y35 | productClassification | ASP |
productStatusInfo | active and preferred | hfgr | A |
packageName | PG-TDSON-8 | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP001687044 |
fourBlockPackageName | PG-TDSON-8-36 | rohsCompliant | yes |
opn | BSC010N04LS6ATMA1 | completelyPbFree | no |
sapMatnrSali | SP001687044 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSP315PH6327XTSA1](/files/uploads/product/s/ebd9f8bebc2d4ce3bf45948f9fbebd2b.webp)
BSP315PH6327XTSA1
X7R 10% Soft Term Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt
![BSC0702LS](/files/uploads/product/s/dd7f090a47eb413fb8d477d80afa4d7f.webp)
BSC0702LS
This MOSFET has a low on-state resistance of 2.3mΩ at 10V, 50A and a threshold voltage of 2.3V at 49uA
![BSM50GP60](/files/uploads/product/s/c53226944c6141b3b9e5045b0301ef7d.webp)
BSM50GP60
High-power transistor for demanding applications
![BSC010N04LSATMA1](/img/package/son8.jpg)
BSC010N04LSATMA1
High-performance MOSFET featuring an N-type channel
![BSC010N04LSIATMA1](/img/package/son8.jpg)
BSC010N04LSIATMA1
N-channel MOSFET transistor designed for switching applications with a maximum voltage rating of 40V and current handling capacity of 37A
![BSC010NE2LSATMA1](/img/package/son8.jpg)
BSC010NE2LSATMA1
BSC010NE2LSATMA1 is a high-power N-channel MOSFET transistor with 8 pins in a TDSON EP package, capable of handling up to 39A of current at 25V
![BSC011N03LSATMA1](/img/package/son8.jpg)
BSC011N03LSATMA1
OptiMOS Power Mosfet with low on-resistance and high conduction capability
![BSC014N04LSIATMA1](/img/package/son8.jpg)
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount":
![BSC014N06NSATMA1](/img/package/son8.jpg)
BSC014N06NSATMA1
High-power TDSON-8 MOSFET with N-channel 60V 100A
![IXZ210N50L2](/img/package/smd.jpg)
IXZ210N50L2
75 IXZ210N50L2 n-channel RF MOSFET
![SI2338DS-T1-GE3](/img/package/sot23.jpg)
SI2338DS-T1-GE3
Vishay Si2338DS-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 3-Pin SOT-23
![HGT1S20N60C3S9A](/files/uploads/product/s/400a06655a774af79f3aa24a539db50e.webp)
HGT1S20N60C3S9A
The HGT1S20N60C3S9A is a high-performance N-Channel IGBT, capable of handling 45A at 600V
![BF998E6327HTSA1](/img/package/sot1434.jpg)
BF998E6327HTSA1
BF998E6327HTSA1 null SOT-143 MOSFETs ROHS
![FQPF18N50V2](/img/package/to220.jpg)
FQPF18N50V2
MOSFET 500V N-Channel QFET V2 Series
![RTR020N05TL](/img/package/sot23.jpg)
RTR020N05TL
Designed in TSMT3 package for easy installation and thermal management
![BSM180D12P3C007](/img/package/module.jpg)
BSM180D12P3C007
With a 2022 production date and RoHS compliance, product BSM180D12P3C007 is primed for swift dispatch
![IXBH16N170A](/img/package/to247.jpg)
IXBH16N170A
150 Watt 16 Amp 1.7kV TO-247AD IGBTs ROHS
![KSC3503DSTU](/img/package/to126.jpg)
KSC3503DSTU
Pin with Three-Tab Configuration
![MTW32N20EG](/img/package/to247.jpg)
MTW32N20EG
Electronic component, power field-effect transistor, 200 volts, 32 amperes, three-pin TO-247 casing