SI2333CDS-T1-GE3
Product Code: SI2333CDS-T1-GE3 - A surface mount power MOSFET with a P-channel configuration
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.359 | $0.36 |
10 | $0.285 | $2.85 |
30 | $0.254 | $7.62 |
100 | $0.215 | $21.50 |
500 | $0.198 | $99.00 |
1000 | $0.188 | $188.00 |
在庫:4,455
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : SI2333CDS-T1-GE3
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パッケージ/ケース : SOT23-3
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : SI2333CDS-T1-GE3 データシート (PDF)
概要 SI2333CDS-T1-GE3
Vishay's SI2333CDS-T1-GE3 is a P-channel transistor designed for use in various electronic applications. With a drain-source voltage of 12V and a continuous drain current of 7.1A, this transistor is suitable for power management and switching circuits. Its surface-mount design and 3-pin configuration make it easy to integrate into circuit boards. The Rds(On) test voltage of 4.5V and maximum gate-source threshold voltage of 1V ensure efficient performance. However, it is important to note that this product is not RoHS compliant
![SI2333CDS-T1-GE3 SI2333CDS-T1-GE3](/files/uploads/product/b/3e1e84a6-48c3-4ee1-26c3-08dbb33edd15.webp)
主な特長
- Raised Source and Field Plate Design for Improved Rds(on)
- Low Gate Charge and Low Input Capacitance
- Excellent Dynamic dV/dt Capability and Low Crss
応用
["Load Switch ", "PA Switch"]仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 12 V |
Id - Continuous Drain Current | 7.1 A | Rds On - Drain-Source Resistance | 35 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 9 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 12 ns |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 35 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 13 ns | Width | 1.6 mm |
Part # Aliases | SI2333CDS-T1-BE3 SI2333CDS-GE3 | Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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