IXFK120N20
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- 365日の品質保証
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部品番号 : IXFK120N20
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パッケージ/ケース : TO264-3
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXFK120N20 データシート (PDF)
概要 IXFK120N20
The N-Channel HiPerFET™ Standard series, exemplified by product IXFK120N20, is a powerhouse in the realm of Power MOSFETs. Designed for both hard switching and resonant mode applications, these MOSFETs boast low gate charge and exceptional ruggedness, coupled with a speedy intrinsic diode. This winning combination makes them the go-to choice for a wide range of industrial needs, from simple circuits to complex systems. Plus, with various standard industrial packages available, including isolated types, these MOSFETs offer flexibility and ease of integration into existing setups
主な特長
- Safe Operating Area
- High Surge Capability
- Fast Thermal Response
- Avalanche Breakdown Protection
応用
- Smart energy solutions
- Simple mounting process
- High-performance capabilities
- Seamless power delivery
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.017 |
| Continuous Drain Current @ 25 ℃ (A) | 120 | Gate Charge (nC) | 300 |
| Input Capacitance, CISS (pF) | 9100 | Thermal resistance [junction-case] (K/W) | 0.22 |
| Configuration | Single | Package Type | TO-264 |
| Power Dissipation (W) | 568 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | No |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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