STD1NK60T4
Robust MOSFET for high-reliability industrial applications
在庫：6,466
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STD1NK60T4
-
パッケージ/ケース : DPAK
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STD1NK60T4 データシート (PDF)
-
Series : STD1NK60T4
概要 STD1NK60T4
STMicroelectronics' STD1NK60T4 is a game-changer in the realm of N-channel Power MOSFETs. Thanks to the revolutionary SuperMESH™ technology, this device boasts a substantial decrease in on-resistance while maintaining a high level of dv/dt capability. Engineers and developers can rely on this MOSFET to deliver exceptional results in demanding tasks where efficiency and speed are paramount
主な特長
- High-frequency performance optimized
- Error correction and detection enabled
- Data transmission improved significantly
- Memory storage capacity increased
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Source Content uid | STD1NK60T4 | Part Life Cycle Code | Active |
| Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-252AA |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | Pin Count | 3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 50 Weeks | Samacsys Manufacturer | STMicroelectronics |
| Avalanche Energy Rating (Eas) | 25 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600 V | Drain Current-Max (Abs) (ID) | 1 A |
| Drain Current-Max (ID) | 1 A | Drain-source On Resistance-Max | 8.5 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30 W | Pulsed Drain Current-Max (IDM) | 4 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
STP140N6F7
0 Volt, 80 Amp Power Transistor
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
SQD19P06-60L-GE3
Vishay SQD19P06-60L-GE3 P-channel MOSFET Transistor, 11 A, -60 V, 3-Pin TO-252AA
APT5010JVR
APT5010JVR Module
PSMN020-150W
Railway-grade power MOSFET
PMZ290UNE2YL
Trans MOSFET N-CH 20V 1.2A 3-Pin DFN T/R
IRGP50B60PD1PBF
CH 600V 75A 390W 3-Pin(3+Tab) TO-247AC Tube
IRFU024NPBF
45W maximum power dissipation at a case temperature of 25°C
SI3440DV-T1-E3
150 V Single N-Channel Power Mosfet with 0.375 Ohms - TSOP-6
2N6328
Trans GP BJT NPN 100V 30A 200000mW 3-Pin(2+Tab) TO-3
BSM35GD120DN2E3224
This module boasts a low power dissipation of 280mW, making it efficient for various applications
NTD3055L170G
75-Tube Packaging