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STD4NK60ZT4

Low-power, high-speed switching device with excellent linearity

数量 単価(USD) 合計金額
1 $0.805 $0.80
10 $0.669 $6.69
30 $0.601 $18.03
100 $0.535 $53.50
500 $0.495 $247.50
1000 $0.474 $474.00

在庫：7,323

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
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迅速な見積もり

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概要 STD4NK60ZT4

The STD4NK60ZT4 from STMicroelectronics is a groundbreaking N-channel Power MOSFET that pushes the boundaries of high-voltage devices. Utilizing the advanced SuperMESH™ technology, this MOSFET boasts exceptional performance and efficiency gains, setting it apart from traditional PowerMESH™ offerings. Equipped with Zener protection and optimized for reduced on-resistance, the STD4NK60ZT4 is the ideal choice for applications requiring high power output and reliability. Its impressive dv/dt capability ensures stable operation in the most challenging environments, making it a standout option for cutting-edge electronics projects

主な特長

  • Robust overload protection mechanism
  • High-quality silicon material used
  • Avalanche-tested for reliable performance

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid STD4NK60ZT4 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 50 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 120 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain Current-Max (Abs) (ID) 4 A
Drain Current-Max (ID) 4 A Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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