STD5N52K3
Trans MOSFET N-CH 525V 4.4A 3-Pin(2+Tab) DPAK T/R
在庫：8,122
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STD5N52K3
-
パッケージ/ケース : DPAK
-
Brand : STMicroelectronics
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STD5N52K3 データシート (PDF)
-
Series : STD5N52K3
概要 STD5N52K3
STMicroelectronics has taken their MDmesh™ technology to the next level with the STD5N52K3 Power MOSFET. This product showcases significant improvements in performance and efficiency, delivering exceptional on-resistance, dynamic performance, and avalanche capability. It is designed to meet the stringent requirements of modern applications
主な特長
- Reverse blocking voltage
- Improved thermal performance
- Small form factor
- Zener-protected
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | STMicroelectronics | Product Category | MOSFET |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 525 V |
| Id - Continuous Drain Current | 4.4 A | Rds On - Drain-Source Resistance | 1.2 Ohms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 17 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 70 W |
| Channel Mode | Enhancement | Tradename | MDmesh |
| Series | STD5N52K3 | Brand | STMicroelectronics |
| Configuration | Single | Fall Time | 16 ns |
| Product Type | MOSFET | Rise Time | 11 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 29 ns |
| Typical Turn-On Delay Time | 9 ns | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
STD18N55M5
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
STL3N65M2
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
STW18NK80Z
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube
STD15P6F6AG
Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R
STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
KSC2752OSTU
ON Semi KSC2752OSTU NPN Transistor, 500 mA, 400 V, 3-Pin TO-126
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
SI2392ADS-T1-GE3
20V Vgs 100V Vds SOT-23 MOSFET
FMMT625TA
A transistor with NPN polarity, SOT23 package, capable of handling voltages up to 150V and currents up to 1A, with a power dissipation of 625mW
BC807-40-7-F
Bipolar PNP Transistors
RSR030N06TL
MOSFET Medium Power Transistor
BSM100GB120DLC
BSM100GB120DLC is a dual IGBT module with a voltage rating of 1200V and a current rating of 100A
FZ3600R17KE3
FZ3600R17KE3 is an Insulated Gate Bipolar Transistor with N-Channel configuration, capable of handling 4800A I(C) and 1700V V(BR)CES
HAT2173H-EL-E
N-Channel Silicon Transistor with Metal Oxide Semiconductor Field-Effect Transistor Technology
AOTF7N65
TO-220F package
ZXMN3A01F
channel silicon metal-oxide semiconductor
DMP3036SSD-13
Enhanced Mode P-Channel MOSFET with a Voltage Drain-Source (Vdss) of -30V and a Gate-Source Voltage (Vgss) of 25V