STD5N60M2
Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.017 | $1.02 |
10 | $0.997 | $9.97 |
30 | $0.985 | $29.55 |
100 | $0.971 | $97.10 |
在庫:8,401
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STD5N60M2
-
パッケージ/ケース : DPAK
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STD5N60M2 データシート (PDF)
-
Series : STD5N60M2
概要 STD5N60M2
The STD5N60M2 MOSFETs are a powerhouse of performance, designed to meet the rigorous demands of high-efficiency converters. Through the use of the innovative MDmesh™ M2 technology, these devices achieve remarkable on-resistance levels and optimized switching behavior, providing users with a reliable and efficient solution for their power conversion needs
主な特長
- Low input capacitance ensures high bandwidth
- Surge protection to 10kV provided
- Rugged design withstands harsh environments
- Fully compliant with industry standards
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STD5N60M2 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | DPAK-3/2 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Additional Feature | AVALANCHE ENERGY RATED | Avalanche Energy Rating (Eas) | 80 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 3.5 A |
Drain-source On Resistance-Max | 1.4 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 0.75 pF | JEDEC-95 Code | TO-252AA |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 45 W |
Pulsed Drain Current-Max (IDM) | 14 A | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 85 ns |
Turn-on Time-Max (ton) | 15 ns |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
STP140N6F7
0 Volt, 80 Amp Power Transistor
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
JANTX2N5666
Trans GP BJT NPN 200V 5A 1200mW 3-Pin TO-5 Bag
BSZ100N06LS3GATMA1
OptiMOS 3 N-channel MOSFET designed for high efficiency in power applications with 60V voltage tolerance
CM100TF-12H
N-channel Insulated Gate Bipolar Transistor (IGBT) Module, rated at 600V and 100A, with 400mW power dissipation, presented in an 18-pin configuration
SI1414DH-T1-GE3
performance N-Channel MOSFET component
NSS1C301ET4G
Surface Mount NPN Bipolar Transistor with 100V Voltage Rating
SI8425DB-T1-E1
Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R
2N7002P,235
N-channel MOSFET with a voltage rating of 60V and a current rating of 0.36A, packaged in SOT-23
SSM3K35AMFV,L3F
MOSFET Transistor with N-type Channel, Suitable for Low-Power Applications at 20V
IXFN60N60
Semiconductor Modules 600V 60A Discrete
BFG540,215
Trans RF BJT NPN 15V 0.12A 400mW 4-Pin(3+Tab) SOT-143B T/R