STF10LN80K5
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220FP Tube
在庫:5,361
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STF10LN80K5
-
パッケージ/ケース : TO-220FP
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STF10LN80K5 データシート (PDF)
-
Series : STF10LN80K5
概要 STF10LN80K5
The STF10LN80K5 is a cutting-edge N-channel Power MOSFET that boasts extremely high voltage capabilities. Utilizing MDmesh™ K5 technology, this innovative component features a unique vertical structure that significantly reduces on-resistance and minimizes gate charge. Ideal for applications where superior power density and high efficiency are paramount, the STF10LN80K5 offers unparalleled performance and reliability
主な特長
- Enhanced surge and fault protection
- Faster response time for improved reliability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STF10LN80K5 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | STMicroelectronics | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![STD100N10F7](/files/uploads/product/s/STD100N10F7-22110026.webp)
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
![STF10N60M2](/files/uploads/product/s/9fd047b9-6a81-481c-16e8-08dbc6589f20.webp)
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
![STF13NM60N](/files/uploads/product/s/cc248b3e-018b-44bd-06cc-08dbbf1058dd.webp)
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
![STF5N80K5](/files/uploads/product/s/7d8dea4a-5975-4d76-2a59-08dbbf1058de.webp)
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
![STGP3HF60HD](/files/uploads/product/s/523b1edc-b5d7-4667-3a98-08dbc6589f1f.webp)
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
![STN3NF06L](/files/uploads/product/s/005b9c8b-903b-4ad8-db77-08dbc6589f1f.webp)
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
![STP110N8F6](/files/uploads/product/s/dfe66ac9-a653-4654-0e26-08dbc6589f1f.webp)
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
![STP140N6F7](/files/uploads/product/s/5c9fbffb-d596-4572-0f11-08dbc6589f20.webp)
STP140N6F7
0 Volt, 80 Amp Power Transistor
![STP4NK60ZFP](/files/uploads/product/s/68784a25-56c9-4d99-09e7-08dbc6589f1f.webp)
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
![STP75NF75](/files/uploads/product/s/0ae2c859-303a-483e-12b1-08dbc6589f1f.webp)
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
![STD4NK50ZT4](/img/package/dpak.jpg)
STD4NK50ZT4
Tape and Reel packaging for STD4NK50ZT4
![ZXM61P03FTA](/img/package/sot233.jpg)
ZXM61P03FTA
30V P-Channel HDMOS Transistor in SOT23 Package
![IPB027N10N5ATMA1](/img/package/d2pak3.jpg)
IPB027N10N5ATMA1
High-current N-channel MOSFET with 120A maximum drain current, 100V voltage rating, and 0.0027ohm on-resistance
![BSS83,215](/img/package/sot143.jpg)
BSS83,215
NXP presents BSS83
![IRFS3806PBF](/img/package/to263.jpg)
IRFS3806PBF
Suitable for applications requiring high power switching capabilities
![2SA2060(TE12L,F)](/img/package/sc70.jpg)
2SA2060(TE12L,F)
The 2SA2060(TE12L,F) power transistor operates at a frequency of 1MHz and has a power dissipation of 2.5W, with a minimum order quantity of 1000
![DRC2114E0L](/img/package/sot23.jpg)
DRC2114E0L
DRC2114E0L Digital NPN Transistor, 100 MA, 50 V, 10 kΩ, 3-Pin Mini3 G3 B
![2SK184GR](/img/package/to92s.jpg)
2SK184GR
N-channel junction field-effect transistor with 6.5mA current
![MJD112G](/img/package/dpak.jpg)
MJD112G
100V collector-emitter breakdown voltage
![SI7465DP-T1-E3](/img/package/power33.jpg)
SI7465DP-T1-E3
SI7465DP-T1-E3 is a power MOSFET device with P-channel enhancement, specified for a voltage range of 60V and a maximum current of 3