STF2N95K5
Trans MOSFET N-CH 950V 2A 3-Pin(3+Tab) TO-220FP Tube
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.730 | $0.73 |
10 | $0.606 | $6.06 |
50 | $0.543 | $27.15 |
100 | $0.483 | $48.30 |
500 | $0.446 | $223.00 |
1000 | $0.425 | $425.00 |
在庫:4,546
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : STF2N95K5
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パッケージ/ケース : TO-220FP
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ブランド : ST
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : STF2N95K5 データシート (PDF)
概要 STF2N95K5
Product STF2N95K5 is a cutting-edge N-channel Zener-protected Power MOSFET that stands out in the market due to its innovative design utilizing ST’s SuperMESH™ 5 technology. This technology, known for its high voltage resilience and avalanche ruggedness, ensures superior performance and reliability in various applications. By incorporating a proprietary vertical structure, STF2N95K5 delivers a substantial decrease in on-resistance, translating to increased efficiency and power density. Furthermore, the ultra-low gate charge of this MOSFET makes it ideal for demanding tasks where superior energy management is key
主な特長
- Precision temperature sensing
- Fast response time
- High accuracy
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STF2N95K5 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | TO-220FP, 3 PIN |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 50 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 950 V |
Drain Current-Max (Abs) (ID) | 2 A | Drain Current-Max (ID) | 2 A |
Drain-source On Resistance-Max | 5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 20 W | Pulsed Drain Current-Max (IDM) | 8 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品のパッケージング保証: 100% ESD 帯電防止保護を特徴とする当社のパッケージングには、高い靭性と優れた緩衝機能が組み込まれています。
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