STF7N60DM2
Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220FP Tube
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.861 | $0.86 |
| 200 | $0.334 | $66.80 |
| 500 | $0.321 | $160.50 |
| 1000 | $0.316 | $316.00 |
在庫：8,346
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部品番号 : STF7N60DM2
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パッケージ/ケース : TO-220FP
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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日付シート : STF7N60DM2 データシート (PDF)
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Series : STF7N60DM2
概要 STF7N60DM2
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
主な特長
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | STMicroelectronics | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 6 A |
| Rds On - Drain-Source Resistance | 900 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage | 3.25 V | Qg - Gate Charge | 7.5 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 25 W | Channel Mode | Enhancement |
| Tradename | MDmesh | Series | STF7N60DM2 |
| Brand | STMicroelectronics | Configuration | Single |
| Product Type | MOSFET | Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs | Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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