STF7N90K5
MOSFET N-channel 900 V, 0.72 Ohm typ 7 A MDmesh K5 Power MOSFET
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.341 | $1.34 |
| 10 | $1.152 | $11.52 |
| 30 | $1.050 | $31.50 |
| 100 | $0.932 | $93.20 |
| 500 | $0.879 | $439.50 |
| 1000 | $0.857 | $857.00 |
在庫：9,232
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STF7N90K5
-
パッケージ/ケース : TO-220FP
-
Brand : STMicroelectronics
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STF7N90K5 データシート (PDF)
-
Series : STF7N90K5
概要 STF7N90K5
With its very high voltage capacity and innovative MDmesh™ K5 technology, the STF7N90K5 N-channel Power MOSFET sets itself apart from the competition. By utilizing a proprietary vertical structure, it has achieved an impressive reduction in on-resistance and ultra-low gate charge, making it the go-to choice for applications with demanding power density and efficiency requirements
主な特長
- Multi-protocol support
- Low-jitter transmission
- Overvoltage protection
- Data integrity maintained
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | STMicroelectronics | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 900 V | Id - Continuous Drain Current | 7 A |
| Rds On - Drain-Source Resistance | 720 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 17.7 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 25 W | Channel Mode | Enhancement |
| Tradename | MDmesh | Series | STF7N90K5 |
| Brand | STMicroelectronics | Configuration | Single |
| Fall Time | 14.7 ns | Product Type | MOSFET |
| Rise Time | 14.2 ns | Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 31.6 ns | Typical Turn-On Delay Time | 13.2 ns |
| Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
STD18N55M5
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
STL3N65M2
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
STW18NK80Z
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube
STD15P6F6AG
Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R
STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
KSC2752OSTU
ON Semi KSC2752OSTU NPN Transistor, 500 mA, 400 V, 3-Pin TO-126
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
NTND31225CZTAG
This Trans MOSFET has a maximum current rating of 0.22A for the N-CH channel and 0.127A for the P-CH channel
SI7938DP-T1-GE3
MOSFET, Non-Negative Channel, Dual-Source, 40V, PPAKSO8 Package
BSZ067N06LS3GATMA1
8TSDSON packaged MOSFET with N-channel polarity, capable of handling continuous drain current
IXTP450P2
N-Channel Power MOSFET with 500V Voltage Rating
PHN210T
N-Channel Metal-oxide Semiconductor FET
IXFN64N60P
ROHS-approved SOT-227B MOSFETs
AOK30B135W1
This IGBT Chip features a power rating of 340W and a maximum voltage of 1350V, making it suitable for demanding electronic systems
TN2524N8-G
With a SOT-89-3 package, TN2524N8-G is a N-channel MOSFET rated for a maximum current of 0.36A and voltage of 240V
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
BSL308PEH6327XTSA1
MOSFET small signal with P-channel