STGF19NC60KD
N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip
在庫:9,467
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : STGF19NC60KD
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パッケージ/ケース : TO-220-3FullPack
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Brand : STMicroelectronics
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Components Classification : Single IGBTs
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日付シート : STGF19NC60KD データシート (PDF)
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Series : STGF19NC60KD
概要 STGF19NC60KD
The STGF19NC60KD IGBTs are a testament to the power of innovation and technology. By incorporating state-of-the-art PowerMESH™ technology, these devices deliver unrivaled switching performance and low on-state behavior. This winning combination ensures that users can enjoy the best of both worlds – high-speed operation and minimal power loss. With the STGF19NC60KD, users can confidently tackle their most demanding applications with ease and efficiency
主な特長
- Robustness against electromagnetic pulses
- High surge immunity guaranteed
- Pulse-by-pulse current limiting
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | PowerMESH™ | Package | Tube |
Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 16 A | Current - Collector Pulsed (Icm) | 75 A |
Vce(on) (Max) @ Vge, Ic | 2.75V @ 15V, 12A | Power - Max | 32 W |
Switching Energy | 165µJ (on), 255µJ (off) | Input Type | Standard |
Gate Charge | 55 nC | Td (on/off) @ 25°C | 30ns/105ns |
Test Condition | 480V, 12A, 10Ohm, 15V | Reverse Recovery Time (trr) | 31 ns |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack | Supplier Device Package | TO-220FP |
Base Product Number | STGF19 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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