STGP10NB60SD
Trans IGBT Chip N-CH 600V 29A 80W 3-Pin(3+Tab) TO-220AB Tube
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部品番号 : STGP10NB60SD
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パッケージ/ケース : TO-220
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Brand : ST
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Components Classification : Single IGBTs
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日付シート : STGP10NB60SD データシート (PDF)
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Series : STGP10NB60SD
概要 STGP10NB60SD
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
主な特長
- Low on-voltage drop (VCE(sat))
- High current capability
- Very soft ultra fast recovery antiparallel diode
応用
POWER CONTROL仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Source Content uid | STGP10NB60SD | Part Life Cycle Code | Active |
| Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-220AB |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
| Case Connection | COLLECTOR | Collector Current-Max (IC) | 29 A |
| Collector-Emitter Voltage-Max | 600 V | Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 5 V | Gate-Emitter Voltage-Max | 20 V |
| JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 31.5 W | Qualification Status | Not Qualified |
| Surface Mount | NO | Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 3100 ns | Turn-on Time-Nom (ton) | 1160 ns |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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