IXGH30N60C3D1
IXGH30N60C3D1 ROHS TO-247AD IGBTs
在庫：6,766
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXGH30N60C3D1
-
パッケージ/ケース : TO-247AD-3
-
Brand : IXYS
-
Components Classification : Single IGBTs
-
日付シート : IXGH30N60C3D1 データシート (PDF)
-
Series : IXGH30N60
概要 IXGH30N60C3D1
The GenX3™ IGBTs are designed to meet the demands of modern power electronics, offering a perfect balance of performance and reliability. For applications requiring high switching speeds and low conduction losses, the 300V GenX3™ IGBTs provide a valuable solution with their rugged and robust construction. As for high current applications, the 600V GenX3™ IGBTs are optimized for soft-switching frequencies exceeding 200 kHz and hard-switching frequencies of 40 kHz. With the 1200V GenX3™ IGBTs, designers can benefit from lower saturation voltages, reduced switching losses, and increased surge current capabilities, thanks to advanced Punch-Through technology
主な特長
- Compact International standard package
- Low cost solution for motor control
- Suitable for wide temperature range
応用
- Innovative PFC technology
- Robust UPS units
- Flexible DC chopper circuits
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | VCES - Collector-Emitter Voltage (V) | 600 |
| Collector Current @ 25 ℃ (A) | 60 | VCE(sat) - Collector-Emitter Saturation Voltage (V) | 3 |
| Fall Time [Inductive Load] (ns) | 47 | Configuration | Copack (FRED) |
| Package Type | TO-247U | Thermal resistance [junction-case] [IGBT] (K/W) | 0.56 |
| Turn-off Energy @ 125 ℃ (mJ) | 0.33 | Collector Current @ 110 ℃ (A) | 30 |
| Thermal resistance [junction-case] [Diode] (K/W) | 0.9 | Forward Current @ 110 ℃ (A) | 30 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
2N6352
Robust design with high surge capability and fast switching performanc
SI7178DP-T1-GE3
MOSFET designed for 100V operation, with a current handling capability of 60A and power dissipation of 104W, exhibiting a 14mohm resistance at 10V
ZVN4106F
Described as a MOSFET discrete semiconductor
IRFS4310PBF
The IRFS4310PBF is a 3-pin D2PAK package transistor with 2 tabs, capable of handling high current loads up to 130A at 100V
CM1000HC-66R
Insulated Gate Bipolar Transistor with 1000A current and 3300V voltage
IXYK120N120C3
IXYK120N120C3: N-Channel IGBT Transistor Chip, 1200 Volts, 220 Amperes, 1500 Watts, TO-264 Housing
SI2338DS-T1-GE3
Vishay Si2338DS-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 3-Pin SOT-23
AOTF4185
40V 34A P-Channel Transistor in TO-220F Tube
IRF7331PBF
The IRF7331PBF from Infineon boasts a dual N-channel MOSFET design capable of handling currents up to 7 amps and voltages of 20 volts
SCT2450KEC
SCT2450KEC is a SiC-based N-MOSFET transistor featuring a unipolar design, offering a voltage rating of 1