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STGW28IH125DF

Trans IGBT Chip N-CH 1250V 60A 375W 3-Pin(3+Tab) TO-247 Tube

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概要 STGW28IH125DF

With their advanced trench gate field-stop structure, the STGW28IH125DF IGBTs offer unparalleled efficiency and performance in both conduction and switching losses. The co-packaged freewheeling diode with a low drop forward voltage further enhances their capabilities, making them the ideal choice for any resonant and soft-switching application. These IGBTs are designed to meet the demands of modern electronics, providing a reliable and efficient solution for a wide range of applications

主な特長

  • Designed for soft commutation only
  • Maximum junction temperature: TJ= 175 °C
  • Minimized tail current
  • VCE(sat)= 2.0 V (typ.) @ IC= 25 A
  • Tight parameters distribution
  • Safe paralleling
  • Low VFsoft recovery co-packaged diode
  • Low thermal resistance
  • Lead free package

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid STGW28IH125DF Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description ,
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 1250 V Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 375 W
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON Turn-off Time-Nom (toff) 322 ns
VCEsat-Max 2.5 V

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    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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