STGW38IH130D
Trans IGBT Chip N-CH 1300V 63A 250W 3-Pin(3+Tab) TO-247 Tube
在庫：3,879
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STGW38IH130D
-
パッケージ/ケース : TO-247
-
Brand : ST
-
Components Classification : Single IGBTs
-
日付シート : STGW38IH130D データシート (PDF)
-
Series : STGW38IH130D
概要 STGW38IH130D
IGBT 1300 V 63 A 250 W Through Hole TO-247 Long Leads
主な特長
- Low saturation voltage
- High current capability
- Low switching loss
- Low static and peak forward voltage drop free
- wheeling diode
応用
POWER CONTROL仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Source Content uid | STGW38IH130D | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-247 |
| Package Description | ROHS COMPLIANT, TO-247, 3 PIN | Pin Count | 3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | STMicroelectronics | Collector Current-Max (IC) | 63 A |
| Collector-Emitter Voltage-Max | 1300 V | Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 5.75 V | Gate-Emitter Voltage-Max | 25 V |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 250 W |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 740 ns |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
STP140N6F7
0 Volt, 80 Amp Power Transistor
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
MC1413BP
Plastic/Epoxy 16 Pin Transistor
BUL310FP
Bipolar Transistors - BJT ROHS in TO-220F Package
IRFPF50PBF
MOSFET RECOMMENDED ALT 844-IRFPF50
SKW30N60HS
TO-247 Tube Trans IGBT Chip N-CH 600V 41A 250W 3-Pin
IRF1010NSPBF
IRF1010NSPBF is a MOSFET with a 55V rating, designed as a 1 N-CH HEXFET with a low on-state resistance of 11mOhms and a high gate charge of 80nC
BCX19,215
Trans GP BJT NPN 45V 0.5A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
BLF647P,112
RF Mosfet LDMOS (Dual)
RUR020N02TL
channel, 20V, 2A
AOD3N50
N-Channel Power MOSFET with 500V Voltage Rating
BFP780H6327XTSA1
RF Amplifier RF BIP TRANSISTORS