STGWT40V60DLF
High-reliability, high-power semiconductor device with built-in freewheeling diode for efficient power switching
在庫：8,399
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STGWT40V60DLF
-
パッケージ/ケース : TO-3P
-
Brand : ST
-
Components Classification : Single IGBTs
-
日付シート : STGWT40V60DLF データシート (PDF)
-
Series : STGWT40V60DLF
概要 STGWT40V60DLF
IGBT Trench Field Stop 600 V 80 A 283 W Through Hole TO-3P
主な特長
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.)
- @ IC = 40 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Low VF soft recovery co-packaged diode
- Lead free package
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Source Content uid | STGWT40V60DLF | Part Life Cycle Code | Obsolete |
| Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | STMicroelectronics |
| Collector Current-Max (IC) | 80 A | Collector-Emitter Voltage-Max | 600 V |
| Gate-Emitter Voltage-Max | 20 V | Operating Temperature-Max | 175 °C |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 283 W | Surface Mount | NO |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
STP140N6F7
0 Volt, 80 Amp Power Transistor
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
IRF1310NSPBF
N-Channel Power MOSFET with 100V Voltage Rating
IXYK120N120C3
IXYK120N120C3: N-Channel IGBT Transistor Chip, 1200 Volts, 220 Amperes, 1500 Watts, TO-264 Housing
SSM3K56FS,LF
U-MOSVI FET with a drain current capability of 0.8A and a voltage withstand of up to 20V, characterized by its low input capacitance of 55pF
IRFP9140NPBF
This IRFP9140NPBF MOSFET is designed for efficient power management in electronic circuits
IRF8721TRPBF
Power MOSFET with a low on-resistance of 8.5mOhm
SI7121DN-T1-GE3
16 Amp 30 Volt P-Channel Power MOSFET in an 8-Pin PowerPAK 1212 EP package on reel
MMBT3906LT3G
40 V PNP silicon transistor capable of handling up to 200 mA of current
TPCA8104(TE12L,Q)
High-voltage NPN transistor for general-purpose application
IRF840ALPBF
262 package with 3 pins and a tab for easy mounting
ZXTP2012GTA
Bipolar Transistors Information