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STP11NM60FD

TO-220 package with tab for easy mounting on circuit boards

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概要 STP11NM60FD

Elevate your high-voltage applications with the STP11NM60FD Power MOSFET from STMicroelectronics. Designed for efficiency, this transistor features a drain-source voltage of 600V and a continuous drain current of 11A, coupled with a low on-resistance of 0.38 ohms. Its TO-220 packaging makes it a reliable choice for power supply, motor control, and lighting systems where performance is key. Additionally, its fast switching speed and low gate charge cater to high-frequency switching needs, ensuring seamless operation in critical scenarios

主な特長

  • High-reliability design
  • Fault tolerance ensured
  • Safe operating range broad
  • Low noise emissions guaranteed
  • Thermal management simple
  • Durable operation expected

応用

  • For power supplies
  • Used in motor control

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 11 A Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 40 nC Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 160 W
Channel Mode Enhancement Series STP11NM60FD
Brand STMicroelectronics Configuration Single
Fall Time 15 ns Forward Transconductance - Min 5.2 S
Height 9.15 mm Length 10.4 mm
Product Type MOSFET Rise Time 16 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-On Delay Time 20 ns Width 4.6 mm
Unit Weight 0.068784 oz

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    部品の品質保証: 365 日

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