STP180N55F3
MOSFET STP180N55F3 is specifically designed as a hyper fast IGBT N-channel with 600V and 6A capabilities
在庫:9,872
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部品番号 : STP180N55F3
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パッケージ/ケース : TO-220-3
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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日付シート : STP180N55F3 データシート (PDF)
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Series : STB180N55F3
概要 STP180N55F3
In conclusion, the STP180N55F3 is a reliable and efficient power MOSFET transistor that offers exceptional performance in high-power applications. Its impressive specifications, combined with its ease of use and environmental compliance, make it a valuable addition to any electronics enthusiast's toolkit
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | STripFET™ | Package | Tube |
Product Status | Obsolete | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 60A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V | Power Dissipation (Max) | 330W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-220 | Package / Case | TO-220-3 |
Base Product Number | STP180 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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