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STW28N60M2

Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube

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概要 STW28N60M2

When it comes to power MOSFETs, the STW28N60M2 sets the bar high with its exceptional design and performance capabilities. Developed using state-of-the-art MDmesh™ M2 technology, these devices offer a unique combination of low on-resistance and optimized switching characteristics that make them a perfect fit for demanding high efficiency converters. With their superior efficiency and reliability, the STW28N60M2 is a standout choice for a wide range of applications where performance is key

主な特長

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid STW28N60M2 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 32 Weeks, 4 Days
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 350 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 22 A Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.15 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W Pulsed Drain Current-Max (IDM) 88 A
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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