STW33N60M2
High-performance power transistor for demanding applications
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.755 | $1.76 |
10 | $1.523 | $15.23 |
30 | $1.378 | $41.34 |
100 | $1.230 | $123.00 |
500 | $1.164 | $582.00 |
1000 | $1.134 | $1,134.00 |
在庫:4,044
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : STW33N60M2
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パッケージ/ケース : TO-247-3
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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日付シート : STW33N60M2 データシート (PDF)
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Series : STW33N60M2
概要 STW33N60M2
- STW33N60M2 is a high-performance N-channel Power MOSFET designed with MDmesh M2 technology. Its innovative strip layout and enhanced vertical structure contribute to low on-resistance and excellent switching characteristics. These features make it perfectly suited for high-efficiency converters that require optimal performance
主な特長
- Robust immunity to electromagnetic interference
- Fast and reliable operation with low power consumption
- High-reliability rating for long-term operation
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STW33N60M2 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | STMicroelectronics | Avalanche Energy Rating (Eas) | 450 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 26 A | Drain-source On Resistance-Max | 0.125 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 2.5 pF |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -50 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 190 W | Pulsed Drain Current-Max (IDM) | 104 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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