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STW36N60M6

Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube

数量 単価(USD) 合計金額
1 $4.185 $4.18
10 $3.710 $37.10
30 $3.428 $102.84
100 $3.141 $314.10
500 $3.010 $1,505.00
1000 $2.950 $2,950.00

在庫：5,433

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください STW36N60M6 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 STW36N60M6

Elevate your power management capabilities with the STW36N60M6 from STMicroelectronics. Featuring the groundbreaking MDmesh™ M6 technology, this SJ MOSFET redefines the standards of performance and efficiency in the semiconductor industry. Through its innovative design and advanced features, the STW36N60M6 delivers unmatched levels of reliability and functionality for a diverse range of applications. With its unique combination of RDS(on)* area optimization and superior switching behavior, this MOSFET offers users a competitive edge in optimizing their end-applications for maximum efficiency and performance. Say goodbye to complexity and hello to innovation with the STW36N60M6 - the future of power management is here

主な特長

  • Reduced switching losses
  • Lower RDS(on) x area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid STW36N60M6 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 30 A
Rds On - Drain-Source Resistance 85 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 3.25 V Qg - Gate Charge 44.3 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 208 W Channel Mode Enhancement
Tradename MDmesh Series Mdmesh M6
Brand STMicroelectronics Configuration Single
Fall Time 7.3 ns Product Type MOSFET
Rise Time 5.3 ns Factory Pack Quantity 600
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 50.2 ns Typical Turn-On Delay Time 15.2 ns
Unit Weight 0.211644 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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