STW38N65M5
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-247 Tube
在庫：5,735
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STW38N65M5
-
パッケージ/ケース : TO-247-3
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STW38N65M5 データシート (PDF)
-
Series : STW38N65M5
概要 STW38N65M5
The STW38N65M5 is a powerful Mosfet transistor designed for high voltage applications, with a maximum drain source voltage of 650V and a continuous drain current of 30A. With an on resistance of only 0.073Ohm, this N-Channel transistor offers efficient performance and low power dissipation. The threshold voltage of 4V and Rds(On) test voltage of 10V ensure reliable operation in various circuit configurations. Additionally, this STmicroelectronics product is RoHS compliant, making it a sustainable choice for environmentally conscious projects
主な特長
- Higher VDSSrating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Source Content uid | STW38N65M5 | Part Life Cycle Code | Active |
| Ihs Manufacturer | STMICROELECTRONICS | Package Description | ROHS COMPLIANT PACKAGE-3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
| Avalanche Energy Rating (Eas) | 660 mJ | Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
| Drain Current-Max (Abs) (ID) | 30 A | Drain Current-Max (ID) | 30 A |
| Drain-source On Resistance-Max | 0.095 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 190 W |
| Pulsed Drain Current-Max (IDM) | 120 A | Surface Mount | NO |
| Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
STP140N6F7
0 Volt, 80 Amp Power Transistor
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
IMZ4T108
BJT bipolar transistor
CSD18534Q5AT
Single SON 5 mm x 6 mm
CM200DY-28H
Power Semiconductor Module
IRF7460
IRF7460 Surface Mount Component
IFS100V12PT4
IGBT4 technology-integrated power module
NVMFS6H848NLT1G
Trench MOSFET 80 Volt Low-Loss SO-8 Flat Lead
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
DTC123YETL
ROHM DTC123YETL NPN Digital Transistor, 100 mA 50 V 2.2 kΩ
SIA417DJ-T1-GE3
6-Pin Trans MOSFET with 12A current rating
SQ2315ES-T1-GE3
Automotive P-Channel 12 V (Drain-Source) 175 degrees Celsius MOSFET