STW48N60DM2
Robust rail-to-rail performance with low total harmonic distortion
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $7.578 | $7.58 |
10 | $6.860 | $68.60 |
30 | $5.618 | $168.54 |
90 | $2.799 | $251.91 |
在庫:4,450
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STW48N60DM2
-
パッケージ/ケース : TO-247-3
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STW48N60DM2 データシート (PDF)
-
Series : STW48N60DM2
概要 STW48N60DM2
The STW48N60DM2 Power MOSFET is a standout component in the MDmesh™ DM2 fast recovery diode series, known for its exceptional performance and reliability. With its low recovery charge and time, as well as low RDS(on), this MOSFET is perfectly suited for demanding applications that require high efficiency converters. Whether used in bridge topologies or ZVS phase-shift converters, the STW48N60DM2 excels in delivering top-notch results and meeting the most stringent requirements
主な特長
- High-speed switching
- Low power consumption
- Robust electrical performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STW48N60DM2 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | STMicroelectronics | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![STD100N10F7](/files/uploads/product/s/STD100N10F7-22110026.webp)
STD100N10F7
STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com
![STF10N60M2](/files/uploads/product/s/9fd047b9-6a81-481c-16e8-08dbc6589f20.webp)
STF10N60M2
MOSFET with N-channel design, capable of handling 600V, with 0.56Ohm on-resistance and 7.5A current capacity using MDmesh M2 design
![STF13NM60N](/files/uploads/product/s/cc248b3e-018b-44bd-06cc-08dbbf1058dd.webp)
STF13NM60N
MOSFET N-CH 600V 11A MDMESH Power MDmesh
![STF5N80K5](/files/uploads/product/s/7d8dea4a-5975-4d76-2a59-08dbbf1058de.webp)
STF5N80K5
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220FP Tube
![STGP3HF60HD](/files/uploads/product/s/523b1edc-b5d7-4667-3a98-08dbc6589f1f.webp)
STGP3HF60HD
IGBT Transistors 4.5 A, 600 V very fast IGBT Ultrafast diode
![STN3NF06L](/files/uploads/product/s/005b9c8b-903b-4ad8-db77-08dbc6589f1f.webp)
STN3NF06L
N-MOSFET transistor with unipolar operation, 60V voltage rating, 4A current rating, and 3.3W power dissipation in SOT223 package
![STP110N8F6](/files/uploads/product/s/dfe66ac9-a653-4654-0e26-08dbc6589f1f.webp)
STP110N8F6
Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube
![STP140N6F7](/files/uploads/product/s/5c9fbffb-d596-4572-0f11-08dbc6589f20.webp)
STP140N6F7
0 Volt, 80 Amp Power Transistor
![STP4NK60ZFP](/files/uploads/product/s/68784a25-56c9-4d99-09e7-08dbc6589f1f.webp)
STP4NK60ZFP
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
![STP75NF75](/files/uploads/product/s/0ae2c859-303a-483e-12b1-08dbc6589f1f.webp)
STP75NF75
MOSFET N-Ch 75 Volt 80 Amp
![SI7456DP-T1-E3](/files/uploads/product/s/6c40f20eebd2468a9797ac6b31133d0a.webp)
SI7456DP-T1-E3
100V MOSFET with 9.3A current rating and 5.2W power dissipation
![BC337-40ZL1G](/img/package/to92.jpg)
BC337-40ZL1G
Transistor BC337-40ZL1G with NPN polarity
![IPN70R2K0P7SATMA1](/img/package/sot223.jpg)
IPN70R2K0P7SATMA1
Null null SOT-223 MOSFETs with ROHS compliance
![BCP56-10T1G](/img/package/sot223.jpg)
BCP56-10T1G
NPN Bipolar Junction Transistor with 80 Volts Voltage Rating and 1 Ampere Current Rating
![AT-42035G](/img/package/smd.jpg)
AT-42035G
Silicon RF Bipolar Transistor AT-42035G
![BF862,215](/img/package/sot23.jpg)
BF862,215
TO-236 3-Pin N-channel junction FET BF862
![MID145-12A3](/img/product.png)
MID145-12A3
IXYS MID145-12A3, IGBT Module, 160 A max, 1200 V, 7-Pin Y4 M5
![2N4250A](/img/package/to18.jpg)
2N4250A
2N4250A Central Semiconductor specifications
![PMV31XN](/img/package/sot23.jpg)
PMV31XN
TRANSISTOR 5900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal
![BSP149H6327XTSA1](/img/package/sot223.jpg)
BSP149H6327XTSA1
Ruggedized transistor suitable for harsh industrial and automotive environment