SUD23N06-31-GE3
N-channel MOSFET designed for high power applications with 50W power dissipation capability
在庫：7,535
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SUD23N06-31-GE3
-
パッケージ/ケース : DPAK-3 (TO-252-3)
-
ブランド : Vishay
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : SUD23N06-31-GE3 データシート (PDF)
概要 SUD23N06-31-GE3
With a threshold voltage of 3V and a test voltage of 10V, the SUD23N06-31-GE3 offers precise control and efficient operation in various electronic circuits. Its automotive qualification standard ensures reliability and durability in automotive applications where high performance is essential. The MSL 1 - Unlimited rating guarantees safe handling and storage of the MOSFET, providing peace of mind to users
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | DPAK-3 (TO-252-3) |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 21.4 A |
| Rds On - Drain-Source Resistance | 31 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 11 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 31.25 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SUD |
| Brand | Vishay Semiconductors | Configuration | Single |
| Fall Time | 25 ns | Forward Transconductance - Min | 20 S |
| Height | 2.38 mm | Length | 6.73 mm |
| Product Type | MOSFET | Rise Time | 15 ns |
| Factory Pack Quantity | 2000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 8 ns | Width | 6.22 mm |
| Part # Aliases | SUD23N06-31-BE3 | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
SUM110P04-05-E3
Power MOSFET with 40V voltage rating and 110A current capacity
SUM45N25-58-E3
250V 45A Power Transistor
SUD19P06-60-E3
Trans MOSFET P-CH 60V 18.3A 3-Pin(2+Tab) DPAK
SUD50P04-09L-E3
P-Channel 40 Volt MOSFET with a maximum operating temperature of 175 degrees Celsius, identified as SUD50P04-09L-E3
SUD50P06-15-BE3
Product SUD50P06-15-BE3 is a MOSFET with a P-channel configuration, featuring a voltage rating of 60V and a current handling capability of 50A
SUM60020E-GE3
N-Channel 80-V (D-S) MOSFET D2PAK (TO-26
SUM90N10-8M2P-E3
90 amp, 100 volt MOSFET designed to handle up to 300 watts of power dissipation
SUM90P10-19L-E3
100-V Power MOSFET
SUD50P04-08-GE3
MOSFET with a voltage capacity of 40 volts and current handling capability of 50 amps
SUG90090E-GE3
The SUG90090E-GE3 is an N-Channel MOSFET with a 200-volt (D-S) rating, suitable for high-temperature environments reaching 175 degrees Celsius
APT8075BN
The APT8075BN model is created by Microchip Technology
MPS2222AG
33mm body height
MMDF2C03HDR2G
Dual MOSFET for both N-Channel and P-Channel, operating at 30V with current ratings of 4
2N6439
Robust construction ensures reliable operatio
DTC143EUBTL
NPN Silicon Bipolar Transistor with 0.1A Collector Current and 50V Breakdown Voltage, RoHS Compliant, in UMT3F Package
AOSP21321
SOIC Packaged P-Channel MOSFET, 30V Voltage Rating, 11A Current Rating, supplied in Tape and Reel
RV2C014BCT2CL
MOSFET P-Chnl with -20V Vdss and +/-1.4A Id RASMID
2SK3482-Z-E1-AZ
Nch Single Power Mosfet 100V 36A 33Mohm Mp-3Z/To-252
IRG4BC30KDPBF
3-Pin(3+Tab) TO-220AB Tube Trans IGBT Chip N-CH 600V 28A 100W
DMN63D8LV-7
Diodes Inc DMN63D8LV-7 Dual N-channel MOSFET Transistor, 0.26 A, 30 V, 6-Pin SOT-563