SUG90090E-GE3
The SUG90090E-GE3 is an N-Channel MOSFET with a 200-volt (D-S) rating, suitable for high-temperature environments reaching 175 degrees Celsius
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部品番号 : SUG90090E-GE3
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パッケージ/ケース : TO-247-3
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Brand : Vishay Siliconix
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Components Classification : Single FETs, MOSFETs
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日付シート : SUG90090E-GE3 データシート (PDF)
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Series : SUG90090E
概要 SUG90090E-GE3
The SUG90090E-GE3 Mosfet features a N-Channel design, with a maximum Continuous Drain Current Id of 100A and Drain Source Voltage Vds of 200V. The On Resistance Rds(On) is measured at 0.0079Ohm, with a test voltage Vgs of 10V and a Threshold Voltage Vgs of 4V. This power transistor is RoHS compliant, ensuring environmental responsibility
主な特長
- Rugged operation guarantees
- Increased reliability assurance
- Compact packaging options
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | ThunderFET® | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 129 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5220 pF @ 100 V | Power Dissipation (Max) | 395W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC | Package / Case | TO-247-3 |
| Base Product Number | SUG90090 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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