TIP31A
Trans GP BJT NPN 60V 3A 2000mW 3-Pin(3+Tab) TO-220 Bag
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.643 | $2.64 |
| 200 | $1.023 | $204.60 |
| 500 | $0.987 | $493.50 |
| 1000 | $0.969 | $969.00 |
在庫：8,169
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : TIP31A
-
パッケージ/ケース : TO-220
-
Brand : Solid State Inc.
-
Components Classification : Single Bipolar Transistors
-
日付シート : TIP31A データシート (PDF)
-
Series : TIP31A
概要 TIP31A
The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. The TIP31, TIP31A, TIP31B, TIP31C, (NPN); and TIP32, TIP32A, TIP32B, TIP32C,(PNP) are complementary devices
主な特長
- New enhanced series
- hFE improved linearity
- High switching speed
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Image | Bipolar Transistors - BJT NPN Gen Pur PowerTIP31ASTMicroelectronics1:$0.898,621In Stock4,000Expected 12/18/2023 | Part # | Mfr. Part #TIP31AMouser Part #511-TIP31A |
| Mfr | STMicroelectronics | Description | Bipolar Transistors - BJT NPN Gen Pur PowerLearn Moreabout STMicroelectronics stm standard products |
| Datasheet | Datasheet | Availability | 8,621In Stock4,000Expected 12/18/2023 |
| Pricing (USD)Filter the results in the table by unit price based on your quantity | 1:$0.8910:$0.781100:$0.599500:$0.4731,000:View1,000:$0.3782,000:$0.3425,000:$0.32310,000:$0.312 | Qty | BuyMin.:1Mult.:1 |
| RoHS | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | NPN | Configuration | Single |
| Maximum DC Collector Current | 3 A | Collector- Emitter Voltage VCEO Max | 60 V |
| Collector- Base Voltage VCBO | 60 V | Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 1.2 V | Pd - Power Dissipation | 40 W |
| Gain Bandwidth Product fT | - | Minimum Operating Temperature | - |
| Maximum Operating Temperature | + 150 C | Series | TIP31A |
| Packaging | Tube |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
TIP31B
Bipolar Transistors - BJT 3.0A 40V
TIP115
Trans Darlington PNP 60V 2A 2000mW 3-Pin(3+Tab) TO-220AB Tube
TIP112
High Current Capability
TIP29
Trans GP BJT NPN 40V 1A 2000mW 3-Pin(3+Tab) TO-220 Bag
TIP31B
Bipolar Transistors - BJT 3.0A 40V
TIP115
Trans Darlington PNP 60V 2A 2000mW 3-Pin(3+Tab) TO-220AB Tube
TIP112
High Current Capability
TIP29
Trans GP BJT NPN 40V 1A 2000mW 3-Pin(3+Tab) TO-220 Bag
FGH75N60UFTU
FS Planar IGBT Transistors, N-Type, capable of handling 75A current at 600V voltage
NTF5P03T3G
This MOSFET, coded as NTF5P03T3G, is designed for P-channel operation with a maximum current handling capacity of 5
IRF3415STRLPBF
HEXFET Single Mosfet with 0.042 Ohm Resistance
SI4840BDY-T1-E3
SOIC-8 Surface Mount Power Mosfet with 9 mOhm resistance at 40 V
MMST3904-7-F
Surface Mount NPN Bipolar Transistor, 40 Volts, 200 Milliamps, 200 Milliwatts, SOT-323 Package, Tape and Reel
MJD340T4G
ON Semiconductor presents the MJD340T4G, a high-voltage NPN bipolar transistor packaged in a 3-pin DPAK
FP10R12NT3
ECONOPIM-23 Insulated Gate Bipolar Transistor, N-Channel, 18A I(C), 1200V V(BR)CES
DTC123JETL
Digital Bipolar Junction Transistor NPN 50V 100mA
FZ1600R12KF4
N-Channel module-7 with a rating of 1600A I(C) and 1200V V(BR)CES
STW20NA50
Silicon N-Channel Power MOSFET with 0.27ohm Resistance