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UM6K31NTN

At 10V and 150mW, UM6K31NTN showcases a voltage drop of 2.3V at 1mA, with its N-Channel SOT-363 MOSFETs meeting the ROHS requirements

数量 単価(USD) 合計金額
5 $0.081 $0.40
50 $0.071 $3.55
150 $0.066 $9.90
500 $0.062 $31.00
3000 $0.059 $177.00
6000 $0.058 $348.00

在庫：5,304

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
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概要 UM6K31NTN

With its advanced micro-processing technologies, the UM6K31NTN is able to offer low ON-resistance, making it a highly efficient solution for a diverse range of applications. Its broad lineup includes compact types, high-power types, and complex types, ensuring that there is a suitable option for every need in the market. Whether you are working on a compact design that requires a smaller component or a high-power application that demands robust performance, this MOSFET is designed to deliver. Its ability to adapt to various requirements makes it a valuable asset for engineers and designers seeking a dependable semiconductor solution

主な特長

Halogen-free According to IEC 61249-2-21 Definition

Low On-Resistance:2.5

Low Threshold: 2 V (typ.)

Low Input Capacitance: 25 pF

Fast Switching Speed: 25 ns

Low Input and Output Leakage

TrenchFET Power MOSFET

Compliant to RoHS Directive 2002/95/EC

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active Technology Si
Configuration Dual FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 250mA
Rds On (Max) @ Id, Vgs 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 25V Power - Max 150mW
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Package / Case SOT-363-6 Supplier Device Package UMT6
Base Product Number UM6K31 Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 250 mA Rds On - Drain-Source Resistance 1.7 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 150 mW Channel Mode Enhancement
Series UM6K31N Brand ROHM Semiconductor
Fall Time 28 ns Product Type MOSFET
Rise Time 5 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 18 ns Typical Turn-On Delay Time 3.5 ns
Part # Aliases UM6K31N Unit Weight 0.000265 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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