ZXMN10A07FTA
MOSFET with N-channel configuration, 0.8A current capacity, and 100V voltage rating in SOT23 package
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.235 | $1.18 |
| 50 | $0.187 | $9.35 |
| 150 | $0.166 | $24.90 |
| 500 | $0.140 | $70.00 |
| 3000 | $0.129 | $387.00 |
| 6000 | $0.122 | $732.00 |
在庫：6,201
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : ZXMN10A07FTA
-
パッケージ/ケース : SOT23-3
-
Brand : Diodes Incorporated
-
Components Classification : Single FETs, MOSFETs
-
日付シート : ZXMN10A07FTA データシート (PDF)
-
Series : ZXMN10A07
概要 ZXMN10A07FTA
The ZXMN10A07FTA is a cutting-edge N-channel MOSFET transistor designed by Diodes Incorporated. With a low threshold voltage of 1V, this component is tailor-made for low-voltage applications. Its impressive specs include a drain-source voltage rating of 100V and a continuous drain current of 1A, ensuring reliable performance in switching and amplification tasks
主な特長
- Fully RoHS compliant products
- Operating temperature range wide
- MIL-STD-883E tested and certified
応用
- Medical equipment
- Sensor technology
- Robotics industry
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 800 mA | Rds On - Drain-Source Resistance | 700 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 2.9 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 806 mW |
| Channel Mode | Enhancement | Series | ZXMN10A07 |
| Brand | Diodes Incorporated | Configuration | Single |
| Fall Time | 2.1 ns | Forward Transconductance - Min | 1.6 S |
| Height | 1.02 mm | Length | 3.04 mm |
| Product | MOSFET Small Signals | Product Type | MOSFET |
| Rise Time | 1.5 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 4.1 ns |
| Typical Turn-On Delay Time | 1.8 ns | Width | 1.4 mm |
| Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
ZXMC3A16DN8TC
Trans MOSFET N/P-CH 30V 4.9A/4.1A 8-Pin SOIC T/R
ZXM62P03E6TA
Small Signal Field-Effect Transistor with 6 PIN SOT-23 Package
ZXMC4559DN8TA
MOSFET Comparator with 60V Negative Polarity Channel
ZXMN10A08DN8TA
MOSFET ZXMN10A08DN8TA: N-Channel, 100V, 2.1A
ZXMN2F34FHTA
20V N-Channel MOSFET, SOT23 RL Package, 4A
ZXMN6A09GTA
SOT223-packaged N-MOSFET transistor engineered for unipolar operation, rated for voltages of up to 60V and currents of 6
ZXMP2120FFTA
The ZXMP2120FFTA MOSFET is a P-channel device suitable for various applications
ZXT690BKTC
ZXT690BKTC is a product in the category of Bipolar Junction Transistors (BJTs)
ZXTN07045EFFTA
5V 4A SOT23F, PK
ZXTN2018FTA
High-performance NPN transistor
2SD2439
NPN Trans Darlington with 150V voltage rating and 10A current rating
BC81716MTF
310mW Power Dissipation
DMG2301LK-7
P-Channel 20 V 2.4A (Ta) 840mW (Ta) Surface Mount SOT-23-3
DMP3130LQ-7
3-Pin SOT-23 T/R
PSMN021-100YLX
LFPAK56-packaged N-channel MOSFET with 100 V rating and 21 mΩ on-resistance
RV1C002UNT2CL
DFN-3(0.8x0.6) MOSFETs with ROHS certification
MTW7N80E
N-CHANNEL POWER MOSFET
IRLH5030TRPBF
MOSFET transistor with N-channel, 100V capacity, 9mOhms resistance, and 44nC gate charge
MTD6N15T4G
Maximum power dissipation of 1.25W at ambient temperature
IXFX230N20T
230A 200V MOSFET