UF3C120150K4S
Maximum voltage of 1.2KV
在庫：9,022
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : UF3C120150K4S
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パッケージ/ケース : TO-247-4
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ブランド : QORVO
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : UF3C120150K4S データシート (PDF)
概要 UF3C120150K4S
Boasting superior power handling capabilities, the UF3C120150K4S silicon carbide MOSFET power module is a breakthrough in high-efficiency power conversion. With its impressive 1200V breakdown voltage and continuous drain current rating of 150A, this module is a powerhouse designed for high-power industrial and automotive applications. The integration of four SiC MOSFETs in a half-bridge configuration simplifies implementation and enhances performance, while the built-in gate drive circuitry streamlines the design process and improves system reliability. Its low on-state resistance and fast switching speed result in reduced power losses and improved efficiency compared to traditional silicon-based power devices
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Active |
| FET Type | N-Channel | Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 1200 V | Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V | Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 12V |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA | Gate Charge (Qg) (Max) @ Vgs | 25.7 nC @ 12 V |
| Vgs (Max) | ±25V | Input Capacitance (Ciss) (Max) @ Vds | 738 pF @ 100 V |
| Power Dissipation (Max) | 166.7W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 | Base Product Number | UF3C120150 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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