FGH75T65SHDTL4
Product FGH75T65SHDTL4 features Insulated Gate Bipolar Transistor (IGBT) technology
在庫:9,024
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FGH75T65SHDTL4
-
パッケージ/ケース : TO-247-4
-
Brand : Onsemi
-
Components Classification : Single IGBTs
-
日付シート : FGH75T65SHDTL4 データシート (PDF)
-
Series : FGH75T65SHDTL4
概要 FGH75T65SHDTL4
The FGH75T65SHDTL4 is a cutting-edge product from ON Semiconductor, utilizing innovative field stop IGBT technology to deliver top-notch performance in a variety of applications. Whether you're working on a solar inverter, UPS, welder, telecom system, ESS, or PFC project, this third-generation IGBT is designed to meet your requirements with minimal conduction and switching losses. With ON Semiconductor's expertise in power management solutions, you can trust that this IGBT will deliver the efficiency and reliability you need for your project to succeed
主な特長
- Advanced Dynamic Management Control
- Fast Response Time for Digital Signals
- High-Speed Data Transmission Capability
- Improved Signal-to-Noise Ratio (SNR)
- Tightened Voltage Regulation Loop
- Self-Diagnostic Fault Detection Mechanism
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-4 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 650 V | Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 150 A |
Pd - Power Dissipation | 455 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | FGH75T65SHDTL4 |
Brand | onsemi / Fairchild | Continuous Collector Current Ic Max | 150 A |
Gate-Emitter Leakage Current | 400 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 450 | Subcategory | IGBTs |
Unit Weight | 0.221838 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
FGH80N60FDTU
Product FGH80N60FDTU: N-channel 600V 80A Trans IGBT Chip, TO-247 Package, 290W Power Dissipation
DMP4013LFG-7
DIODES INC. - DMP4013LFG-7. - MOSFET, AEC-Q101, P-CH, -10.3A, -40V
BFG135,115
RF NPN Bipolar Junction Transistor 15V 0.15A 1000mW
BFG67/X,215
BFG67/X,215 NPN Bipolar Junction Transistor 10V 0.05A SOT
DMP3008SFG-7
DMP3008SFG-7 for High Power Applications
DMP3017SFGQ-7
MOSFET with P-Channel Enhancement Mode, 30V VDS, and 25±V VGS
DMP3036SFG-7
This SMT Mosfet has a low on-state resistance of 20 mOhm, making it highly efficient
DMP6050SFG-7
Silicon Power FET, P-Channel Type, with a Drain Current of 4.8A, 60V Voltage Rating, and an On-Resistance of 0.05ohm
DMT6008LFG-7
Part number DMT6008LFG-7
DMT6007LFG-7
007LFG-7, 8-Pin
IRFS4010-7PPBF
Advanced D2PAK package with high current handling capabilities
BSC520N15NS3GATMA1
BSC520N15NS3GATMA1
SKB10N60A
IGBT Transistor with 600V Voltage Capability and 10A Current Handling
BF998E6327HTSA1
BF998E6327HTSA1 null SOT-143 MOSFETs ROHS
SP8M4TB
MOSFET N/PCH 30V 9A/7A 8PIN TRANS
TPDV1225RG
TRIAC TPDV1225RG, rated at 1200V with a gate trigger voltage of 1.5V and a maximum gate current of 150mA, in a TOP 3-pin package
FS30R06XE3
The FS30R06XE3 is a high-performance N-channel IGBT module, housed in a 15-pin EASY1-1 package, suitable for various power control needs
BSC066N06NSATMA1
Product BSC066N06NSATMA1 is a N-channel MOSFET capable of handling up to 60 volts and 15 amps
IRFPE50PBF
N-channel MOSFET,IRFPE50 7.8A 600V
NTRV4101PT1G
P-channel MOSFET rated for -20 volts, 3.2 amps, with an on-resistance of 85 milliohms