|
FDD18N20LZ
|
UniFET N-Channel MOSFET rated for 200V |
onsemi |
8,526 |
|
|
FDD3672
|
6.5A current capacity N-channel power MOSFET with a voltage rating of 100V, packaged in DPAK with 3 pins, including 2 tabs |
onsemi |
5,711 |
|
|
FDD306P
|
Trans MOSFET P-CH 12V 6.7A 3-Pin(2+Tab) DPAK T/R |
onsemi |
9,524 |
|
|
FDD5612
|
MOSFET 60V N-Ch PowerTrench |
onsemi |
5,945 |
|
|
FDD6296
|
Fast Switching PowerTrench MOSFET with 30V, 50A capacity and 8.8mΩ resistance |
Fairchild Semiconductor |
8,437 |
|
|
FDD8453LZ
|
Trans MOSFET N-CH Si 40V 16.4A 3-Pin(2+Tab) DPAK T/R |
onsemi |
6,708 |
|
|
FDD850N10L
|
Trans MOSFET N-CH 100V 15.7A 3-Pin(2+Tab) DPAK T/R |
onsemi |
8,315 |
|
|
FDD8874
|
Trans MOSFET N-CH 30V 18A 3-Pin(2+Tab) DPAK T/R |
Fairchild Semiconductor |
6,732 |
|
|
IPD053N08N3GATMA1
|
MOSFET with Trench technology for 40-100V voltage range |
Infineon Technologies |
9,804 |
|
|
IPD100N04S402ATMA1
|
Trans MOSFET N-CH 40V 100A Automotive |
Infineon Technologies |
7,639 |
|
|
FQD16N25C
|
DPAK-packaged N-Channel Power MOSFET utilizing QFET® technology |
onsemi |
6,390 |
|
|
IDD05SG60C
|
SBD with a maximum current rating of 5A and a forward voltage drop of 2.1V at 600V |
Infineon Technologies |
5,034 |
|
|
IDD03SG60C
|
TO-252 Schottky Rectifier Diode, Silicon Carbide, 1 Phase, 1 Element, 3A, 600V V(RRM), Green Plastic Housing |
INFINEON |
5,214 |
|
|
IDM02G120C5XTMA1
|
Schottky Rectifier Diode: Single-Phase, 1-Element, Silicon Carbide, 1200V V(RRM), TO-252 Package |
Infineon Technologies |
8,610 |
|
|
IGD01N120H2
|
Transistors designed for high power applications |
Infineon Technologies |
7,390 |
|
|
IKD06N60R
|
High Power IGBT Transistors for 600V Hard Switching Application |
Infineon Technologies |
5,509 |
|
|
IPD042P03L3 G
|
3-Pin(2+Tab) DPAK T/R |
Infineon Technologies |
7,357 |
|
|
IPD122N10N3GATMA1
|
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) DPAK T/R |
Infineon Technologies |
7,684 |
|
|
IPD30N10S3L34ATMA1
|
Automotive grade |
Infineon |
7,239 |
|
|
IPD320N20N3GATMA1
|
MOSFET N-Ch 200V 34A OptiMOS3 DPAK |
Infineon Technologies |
9,417 |
|
|
IPD35N10S3L26ATMA1
|
Automotive-grade N-channel MOSFET featuring a 100V voltage rating, 35A current capacity, and DPAK package with 3 pins |
Infineon |
6,416 |
|
|
IPD380P06NMATMA1
|
MOSFET TRENCH 40 - 100V |
Infineon Technologies |
9,880 |
|
|
IPD50P04P4-13
|
MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 TO-252-3 |
INFINEON |
4,476 |
|
|
IPD50R1K4CE
|
This power FET boasts superior current handling and fast switching times, making it ideal for power management system |
INFINEON |
7,240 |
|
|
IPD5N25S3-430
|
Reliable and efficient MOSFETs for demanding industrial application |
INFINEON |
8,516 |
|
|
IPD60N10S4L12ATMA1
|
TO-252 package with 3-pin configuration for easy mounting |
Infineon Technologies |
6,029 |
|
|
IPD60R280P7SAUMA1
|
Ideal for use in power supplies and motor control applications |
Infineon Technologies |
5,679 |
|
|
IPD70R360P7SAUMA1
|
TO-252 packaged MOSFET with N-channel operation, rated for 700V voltage and 12.5A current |
Infineon Technologies |
9,794 |
|
|
IPD80R1K2P7ATMA1
|
800V, 4.5A power transistor |
Infineon Technologies |
6,715 |
|
|
IPD85P04P407ATMA2
|
channel MOSFET 40V 85A TO-252 T/R |
Infineon Technologies |
7,674 |
|
|
IPD90P04P405ATMA2
|
channel Transistor |
Infineon |
6,834 |
|
|
IPD95R450P7ATMA1
|
Power MOSFET with a 950V maximum voltage and 14A maximum current |
Infineon Technologies |
8,631 |
|
|
IPD90P04P4L04ATMA2
|
40V power MOSFET with 2+Tab pin configuration for automotive use |
Infineon |
9,879 |
|
|
IPD95R750P7ATMA1
|
Tape and Reel Packaging for Trans MOSFET |
Infineon Technologies |
6,207 |
|
|
IRF2804STRL7PP
|
Transistor MOSFET |
Infineon |
8,334 |
|
|
IRF60R217
|
Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R |
Infineon |
8,787 |
|
|
IRFR13N20DTRPBF
|
Effect Transistor |
Infineon Technologies |
9,712 |
|
|
IRFR120ZTRPBF
|
IRFR120ZTRPBF MOSFET - TO-252AA, 100V, 8.7A, 190mOhm |
Infineon Technologies |
9,855 |
|
|
IRFR24N15DTRPBF
|
High-power MOSFET transistor capable of handling up to 24A of current at 150V |
Infineon Technologies |
9,309 |
|
|
IRFR2407TRPBF
|
International Rectifier IRFR2407TRPBF N-channel MOSFET Transistor, 42 A, 75 V, 3-Pin TO-252AA |
Infineon Technologies |
6,126 |
|
|
IRFR2607ZPBF
|
Description of IRFR2607ZPBF: Trench MOSFETs for High-Efficiency Applications |
Infineon Technologies |
8,370 |
|
|
IRFR3707ZTRPBF
|
MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC |
Infineon Technologies |
7,758 |
|
|
IRFR3910PBF
|
MOSFET N-Channel 100V 16A DPAK Infineon IRFR3910PBF N-channel MOSFET Transistor, 16 A, 100 V, 3-Pin DPAK |
Infineon Technologies |
9,211 |
|
|
IRFR4104PBF
|
POWER FIELD-EFFECT TRANSISTOR |
Infineon Technologies |
5,212 |
|
|
IRFR420TRPBF
|
Trans MOSFET N-CH 500V 2.4A 3-Pin(2+Tab) DPAK T/R |
Vishay Siliconix |
6,493 |
|
|
IRFR7540PBF
|
With a power dissipation rating of 140W, the IRFR7540PBF is suitable for demanding circuit designs that require high power handling capabilities |
Infineon Technologies |
6,999 |
|
|
IRFR5410TRLPBF
|
ROHS compliant 4V threshold voltage at 250uA |
Infineon Technologies |
6,880 |
|
|
IRFR9014PBF
|
Transistor, N-Channel, 60V, 5.1A, 3-Pin DPAK |
Vishay Siliconix |
5,074 |
|
|
IRFR825TRPBF
|
The IRFR825TRPBF MOSFET is designed for use in switching applications where high voltage and moderate current handling are required |
Infineon Technologies |
9,387 |
|
|
IRL3803STRRPBF
|
N-channel 30-volt 140-amp D2PAK transistor |
Infineon |
9,046 |
|
