|
TS78M12CP
|
TS78M12CP Regulator: One Output, Bipolar Technology |
taiwan semiconductor |
7,303 |
|
|
STD85N3LH5
|
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
STMicroelectronics |
7,635 |
|
|
STGD8NC60KDT4
|
STMICROELECTRONICS - STGD8NC60KDT4 - IGBT, SINGLE, 600V, 15A, TO-252 |
STMicroelectronics |
7,326 |
|
|
MJD44H11T4-A
|
Trans GP BJT NPN 80V 8A 20000mW Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
STMicroelectronics |
5,724 |
|
|
RSD050N10TL
|
Single N-Channel 100 V 15 W 14 nC Silicon Surface Mount Mosfet - CPT-3 |
Rohm Semiconductor |
6,533 |
|
|
STD1NK80ZT4
|
channel SuperMESH Power MOSFET with Zener protection, 800 V, 1 A, 13 Ohm typ., in a DPAK package |
STMicroelectronics |
8,748 |
|
|
STD8N65M5
|
Trans MOSFET N-CH Si 650V 7A 3-Pin(2+Tab) DPAK T/R |
STMicroelectronics |
7,013 |
|
|
RFD14N05LSM
|
Power N-channel MOSFET TO-252AA |
onsemi |
5,008 |
|
|
STD3NK100Z
|
MOSFET SuperMESH NPN Zener Hi Vltg |
STMicroelectronics |
8,254 |
|
|
IDD10SG60C
|
TO252-3, IDD10SG60C: 600V, 10A |
Infineon Technologies |
5,962 |
|
|
BA05FP-E2
|
LDO Regulator Pos 5V 1A 3-Pin(2+Tab) TO-252 T/R |
Rohm Semiconductor |
7,100 |
|
|
LD1117DT
|
LDO Regulator Pos 1.25V to 15V 1.3A 3-Pin(2+Tab) DPAK Tube |
ST |
8,059 |
|
|
RB095B-40TL
|
Schottky Rectifier Diode capable of handling 6A of current with a 45V V(RRM) |
Rohm Semiconductor |
8,450 |
|
|
STD70N02L
|
This product is a N-channel MOSFET, offering a low on-resistance of 0.0068 Ohm and capable of handling currents up to 60A at 24V |
STMicroelectronics |
9,494 |
|
|
2STD2360T4
|
PNP Bipolar Transistor with a maximum voltage of 60V and current rating of 3A |
STMicroelectronics |
5,242 |
|
|
L4008D6RP
|
TRIAC 400V 8A(RMS) 85A 3-Pin(2+Tab) DPAK T/R |
Littelfuse Inc. |
8,728 |
|
|
STD14NM50N
|
Features of STD14NM50N: With a low gate charge of 27 nanoCoulombs and a power dissipation of 90 watts |
Stmicroelectronics |
8,959 |
|
|
MJD47T4
|
Trans GP BJT NPN 250V 1A 15000mW 3-Pin(2+Tab) DPAK T/R |
onsemi |
6,356 |
|
|
SQD19P06-60L_GE3
|
channel design, designed for high power applications with a maximum voltage of 60V and current handling of 20A |
Vishay Siliconix |
7,890 |
|
|
SPD02N60S5
|
Infineon SPD02N60S5 N-channel MOSFET Transistor, 1.8 A, 600 V, 3-Pin TO-252 |
INFINEON |
7,774 |
|
|
NP50P04SDG-E1-AY
|
NP50P04SDG-E1-AY, a TO252 MOSFET, operates as a P-channel device with a maximum voltage of 40V and a current rating of 50A |
Renesas Electronics Corporation |
9,863 |
|
|
MBRD10100CT-13
|
MBRD10100CT-13 Schottky Rectifier Diode by Diodes Inc., 100V, 5A, TO-252 Package, RoHS Conformance |
Diodes Incorporated |
8,239 |
|
|
NP36P06SLG-E1-AY
|
60V 36A P-channel MOSFET in TO252 package |
Renesas Electronics Corporation |
8,391 |
|
|
STD7NM80
|
This MOSFET offers a power dissipation of 90W and is designed for operation at 5V with a leakage current of 250uA |
Stmicroelectronics Nv |
7,870 |
|
|
RSD080P05TL
|
Power Field-Effect Transistor, 8A I(D), 45V, 0.147ohm |
Rohm Semiconductor |
8,395 |
|
|
MBRD20100CT-13
|
Rectifier diode |
Diodes Incorporated |
9,219 |
|
|
RB095BM-90TL
|
Different Expressions in English |
Rohm Semiconductor |
9,840 |
|
|
STD7N80K5
|
DPAK-packaged N-channel MOSFET capable of handling 800V and 6A, supplied on tape and reel for automated assembly |
STMicroelectronics |
9,782 |
|
|
STD9N60M2
|
High-performance N-channel MOSFET, rated for 600V with a low on-resistance of 0.72 ohm, incorporating MDMesh M2 design for enhanced performance |
STMicroelectronics |
6,821 |
|
|
STPS1045BY-TR
|
High-Voltage Automotive Schottky Rectifier with 10-Amp Capacity |
STMicroelectronics |
7,103 |
|
|
BD3571FP-E2
|
V output regulator |
Rohm Semiconductor |
9,344 |
|
|
STD2805T4
|
60V 15W PNP Bipolar Transistor |
STMicroelectronics |
7,853 |
|
|
STD8NM60N
|
DPAK-packaged N-CH MOSFET rated for 600V and 7A current, available in tape and reel format |
STMicroelectronics |
5,090 |
|
|
MJD44H11AJ
|
MJD44H11AJ Bipolar Transistors - BJT |
Nexperia USA Inc. |
8,196 |
|
|
UPC2933AT-E1-AZ
|
TO-252 Linear Voltage Regulators |
Renesas Electronics Corporation |
6,476 |
|
|
FDD86110
|
Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R |
onsemi |
9,286 |
|
|
NP52N06SLG-E1-AY
|
Automotive-grade Power MOSFETs |
renesas |
7,173 |
|
|
RSD046P05TL
|
3+Tab-Pin SOT-428 |
Rohm Semiconductor |
9,221 |
|
|
SUD50P08-25L-BE3
|
MOSFET with 80V Voltage Rating and 17A Drain-Source Current in P-Channel Configuration |
Vishay Siliconix |
5,070 |
|
|
AZ1117CD-ADJTRG1
|
Low dropout voltage regulator, adjustable output, 13.6V, 0.8A, operating temperature -20 to 125 degrees Celsius, RoHS compliant |
Diodes Incorporated |
7,827 |
|
|
IPD50R380CEAUMA1
|
Consumer Grade MOSFET: IPD50R380CEAUMA1 |
Infineon Technologies |
6,916 |
|
|
BTS3046SDR
|
N-Channel Silicon Metal-oxide Semiconductor FET in TO-252 package, with green plastic |
Infineon Technologies |
9,427 |
|
|
STD724T4
|
A medium power transistor, the STD724T4, functions as an NPN bipolar junction transistor (BJT), catering to diverse electronic circuit needs |
STMicroelectronics |
5,443 |
|
|
SJ6008DRP
|
Silicon Controlled Rectifiers with 600V and 8A in TO252 Package |
Littelfuse Inc. |
8,132 |
|
|
STD6N80K5
|
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R |
STMicroelectronics |
7,508 |
|
|
NGD18N40ACLBT4G
|
Trans IGBT Chip N-CH 430V 15A 115W 3-Pin(2+Tab) DPAK T/R |
Littelfuse Inc. |
7,302 |
|
|
STD6NF10T4
|
Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) DPAK T/R |
STMicroelectronics |
6,197 |
|
|
SPD04P10PL G
|
MOSFET with P-channel configuration capable of handling up to -100 volts and conducting 4.2 amperes, housed in a DPAK-2 package |
Infineon Technologies |
6,679 |
|
|
ACST310-8BTR
|
800V DPAK TRIACs (ACST310-8BTR): Designed to operate at currents of 20mA or 10mA, conforming to ROHS regulations |
STMicroelectronics |
6,825 |
|
|
RF505BM6SFHTL
|
Super Fast Recovery Diode (AEC-Q101 Qualified) |
Rohm Semiconductor |
6,564 |
|
