|
IRF3315PBF
|
The IRF3315PBF is a power MOSFET with an N-channel design capable of handling 150V and 23A in a TO220AB package |
Infineon Technologies |
4,976 |
|
|
IRF3808PBF
|
High-performance MOSFET suitable for power applications |
Infineon Technologies |
8,628 |
|
|
IRF5305PBF
|
IRF5305PBF: An Infineon Technologies power MOSFET utilizing P-channel HEXFET technology |
Infineon Technologies |
7,479 |
|
|
IRF6215PBF
|
MOSFETs IRF6215PBF TO-220AB-3 ROHS |
Infineon Technologies |
4,459 |
|
|
IRF630NPBF
|
MOSFET with a voltage rating of 200V, a current rating of 9.5A, a resistance of 300mOhm, and a charge of 23.3nC |
Infineon Technologies |
6,320 |
|
|
IRF6218PBF
|
Low ON resistance of 150mΩ at 10V and 16A |
Infineon Technologies |
9,624 |
|
|
IRF640NPBF
|
Suitable for applications requiring a power dissipation of up to 150W |
Infineon Technologies |
7,368 |
|
|
IRF9530NPBF
|
P Channel MOSFET with 100V voltage rating |
Infineon Technologies |
2,085 |
|
|
IRF9Z24NPBF
|
Tube Packaged Transistor with P-Channel Si MOSFET Technology, 55V Voltage Rating, and 12A Current Rating |
Infineon Technologies |
8,097 |
|
|
IRF9Z34NPBF
|
MOSFET with P-Channel, -55V Voltage, -17A Current, 100mOhm Resistance, and 23.3nC Charge |
Infineon Technologies |
7,590 |
|
|
IRFB260NPBF
|
With a high current rating of 56A, MOSFET IRFB260NPBF is ideal for industrial and automotive applications |
Infineon Technologies |
9,795 |
|
|
IRFB3004PBF
|
N-channel power MOSFET with 3 pins and tab |
Infineon Technologies |
6,805 |
|
|
IRFB3207PBF
|
With a drain-source voltage of 75V and a continuous drain current of 75A, the IRFB3207PBF is designed for use in a wide range of electronic devices |
Infineon Technologies |
6,365 |
|
|
IRFB3306GPBF
|
N-channel silicon power MOSFET with a voltage rating of 60V and a maximum current handling capacity of 160A in a TO-220AB package, supplied in a tube |
Infineon Technologies |
8,023 |
|
|
IRFB4019PBF
|
The IRFB4019PBF is a MOSFET known for its 150V voltage rating, 17A current handling capacity, 95mOhm on-resistance, and 13nC gate charge |
Infineon Technologies |
5,139 |
|
|
IRFB4020PBF
|
N-Channel IRFB4020 Transistor |
Infineon Technologies |
7,109 |
|
|
IRFB4110PBF
|
180 A, 100 V, 3-Pin TO-220AB |
Infineon Technologies |
4,478 |
|
|
IRFB4137PBF
|
The IRFB4137PBF is a power MOSFET featuring N-channel conductivity, rated for voltages up to 300V and currents up to 38A |
Infineon Technologies |
9,737 |
|
|
IRFB4229PBF
|
High-performance N-Channel Power MOSFET capable of handling high current and voltage levels |
Infineon Technologies |
4,414 |
|
|
IRFB4321PBF
|
This product is an N-channel MOSFET with a maximum voltage rating of 150V and a current handling capability of 85A, packaged in TO-220AB |
Infineon Technologies |
4,367 |
|
|
IRFB4332PBF
|
3-Pin(3+Tab) TO-220AB Tube N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor 250V 60A |
Infineon Technologies |
6,780 |
|
|
IRFB4510PBF
|
High-Power N-Channel MOSFET suitable for high current applications |
Infineon Technologies |
8,431 |
|
|
IRFB4610PBF
|
TO-220-3 Power Mosfet with 100 V Voltage Rating |
Infineon Technologies |
9,423 |
|
|
IRFB4615PBF
|
Transistor MOSFET N-channel with 150V, 35A in TO-220AB packaging tube |
Infineon Technologies |
7,089 |
|
|
IRFB52N15DPBF
|
60A 150V MOSFET with 32mOhm on-resistance and 60nC gate charge |
Infineon Technologies |
7,266 |
|
|
IRFB5615PBF
|
Infineon IRFB5615PBF transistor |
Infineon Technologies |
5,354 |
|
|
IRFB5620PBF
|
Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm |
Infineon Technologies |
5,519 |
|
|
IRFB59N10DPBF
|
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm |
Infineon Technologies |
5,691 |
|
|
IRFB7434PBF
|
High current capability MOSFET suitable for various applications |
Infineon Technologies |
7,347 |
|
|
IRFB7437PBF
|
TO-220AB Packaged N-channel Silicon MOSFET Rated for 40V and 250A Applications |
Infineon Technologies |
9,428 |
|
|
IRFB7446PBF
|
23A, 40V silicon n-channel transistor |
Infineon Technologies |
9,465 |
|
|
IRFB7546PBF
|
High current capability 60V N-type MOSFET |
Infineon Technologies |
7,403 |
|
|
IRFI3205PBF
|
Package: TO-220FP |
Infineon Technologies |
6,351 |
|
|
IRFI1310NPBF
|
Full-Pak configuration |
Infineon Technologies |
5,795 |
|
|
IRFI540NPBF
|
220FP package style with 3 pins and a tab for easy installation |
Infineon Technologies |
6,471 |
|
|
IRFIB41N15DPBF
|
High Performance HEXFET Power Mosfet |
Infineon Technologies |
7,563 |
|
|
IRL2703PBF
|
N-channel power MOSFET |
Infineon Technologies |
5,378 |
|
|
IRL7833PBF
|
MOSFET with a low gate charge and high peak current capability |
Infineon Technologies |
7,883 |
|
|
IRLB4132PBF
|
High-power transistor for field-effect applications |
Infineon Technologies |
7,778 |
|
|
IRLB8748PBF
|
IRLB8748PBF is a high-current N-channel MOSFET transistor with a low on-resistance of 0.0038 ohms |
Infineon Technologies |
7,097 |
|
|
IRLI540NPBF
|
TO-220AB Full-Pak Tube Packaging for N-channel Power MOSFET with 100V and 23A Ratings |
Infineon Technologies |
5,234 |
|
|
IRLIB9343PBF
|
effect transistor |
Infineon Technologies |
5,614 |
|
|
IXBP5N160G
|
Transistors with a 5 amp current limit and 1600V voltage withstand rating |
Ixys Integrated Circuits Division |
8,258 |
|
|
IXFP7N100P
|
High Performance HiPerFET Technology |
Ixys Integrated Circuits Division |
9,002 |
|
|
IXTP26P20P
|
26A P-channel MOSFET with 200V voltage rating in TO-220AB package |
Ixys Integrated Circuits Division |
6,534 |
|
|
IXTP48N20T
|
Discrete MOSFET with 48A and 200V ratings in N-channel configuration |
Ixys Integrated Circuits Division |
8,329 |
|
|
IXTP60N10T
|
Field-effect transistor for power applications |
Ixys Integrated Circuits Division |
7,948 |
|
|
KA7810ETU
|
Provides stable output voltage |
Onsemi |
5,987 |
|
|
L4810CV
|
LDO Voltage Regulators 10V 0.4A Positive |
Stmicroelectronics |
6,805 |
|
|
L4931CV33
|
Efficient positive voltage regulator delivering 3.3V at 0.25A |
Stmicroelectronics |
9,928 |
|
