IXTP60N10T
Field-effect transistor for power applications
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.928 | $0.93 |
| 10 | $0.772 | $7.72 |
| 30 | $0.694 | $20.82 |
| 100 | $0.617 | $61.70 |
| 500 | $0.524 | $262.00 |
| 1000 | $0.500 | $500.00 |
在庫：7,948
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXTP60N10T
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パッケージ/ケース : TO220-3
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXTP60N10T データシート (PDF)
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Series : IXTP60N10
概要 IXTP60N10T
Designed to deliver optimal performance in demanding conditions, the IXTP60N10T Trench Gate Power MOSFETs are engineered for excellence. Their ability to maintain a low RDS(on) ensures efficient power usage, while their robust construction allows them to operate smoothly in extreme temperatures ranging from -40°C to 175°C. These features make them a reliable choice for applications where reliability and performance are paramount, such as in harsh environmental conditions
主な特長
- Safe and Reliable
- High Temperature Tolerance
- Long Lifespan
- Maintenance Friendly
応用
- Robust power supplies
- Innovative energy solutions
- Precision power control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 100 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.018 |
| Continuous Drain Current @ 25 ℃ (A) | 60 | Gate Charge (nC) | 49 |
| Input Capacitance, CISS (pF) | 2650 | Thermal resistance [junction-case] (K/W) | 0.85 |
| Configuration | Single | Package Type | TO-220 |
| Typical Reverse Recovery Time (ns) | 59 | Power Dissipation (W) | 176 |
| Sample Request | Yes | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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