IXBP5N160G
Transistors with a 5 amp current limit and 1600V voltage withstand rating
在庫：8,258
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXBP5N160G
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パッケージ/ケース : TO220-3
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ブランド : IXYS
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コンポーネントの分類 : Single IGBTs
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日付シート : IXBP5N160G データシート (PDF)
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Series : IXBP5N160
概要 IXBP5N160G
In conclusion, the IXBP5N160G BiMOSFET represents a significant advancement in power semiconductor technology, offering a compelling combination of performance, efficiency, and robustness. Its innovative design and unique features make it a valuable asset for a wide range of high voltage applications, setting a new standard for reliability and functionality in the field
主な特長
- Optimized signal-to-noise ratio
- Improved audio quality metrics
- Increased digital processing speed
応用
- Cutting-edge voltage technology
- Pulse control innovations
- High voltage circuitry
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Not for New Designs | VCES - Collector-Emitter Voltage (V) | 1600 |
| Collector Current @ 25 ℃ (A) | 5.7 | VCE(sat) - Collector-Emitter Saturation Voltage (V) | 4.9 |
| Configuration | Copack (FRED) | Package Type | TO-220AB |
| Fall Time [Resistive Load] (ns) | 70 | Thermal resistance [junction-case] (K/W) | 1.85 |
| Collector Current @ 90 ℃ (A) | 3.5 | Driving Voltages (V) | 10 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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