APL502J
500V MOSFET Discrete Semiconductor Modules FG, 0.12_OHM
在庫:7,506
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : APL502J
-
パッケージ/ケース : SOT-227-4
-
Brand : Microchip Technology
-
Components Classification : Single FETs, MOSFETs
-
日付シート : APL502J データシート (PDF)
概要 APL502J
In the realm of high-performance electronics, the APL502J shines as a standout component tailor-made for demanding applications. With a high breakdown voltage, impressive continuous drain current, and ultra-low on-resistance, this N-channel MOSFET transistor delivers unparalleled performance and efficiency. Its TO-220 package ensures effective heat dissipation, while its fast switching speed enables seamless high-frequency operation. When it comes to power conversion and current handling, the APL502J sets the standard for excellence in the world of semiconductor technology
主な特長
- Efficient power management for small loads
- Fully protected against overcurrent and overheating
- High current capacity up to 1A at 2.5V out
- Precise voltage regulation for sensitive circuits
- Wide input voltage range with low dropout
- Compact size perfect for space-constrained designs
応用
- Portable electronic devices
- Wireless communication systems
- Photovoltaic panels
- Battery-powered systems
- Industrial equipment
- Consumer electronics
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Type | Silicon Discrete MOSFET | Continuous Drain Current at 25°C (A) [max] | 43 - 58 |
Package Type(s) | SOT-227, T-MAX, TO-264 | Continuous Drain Current at 25°C [I(D)] (A) [family max] | 58 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![APT25GT120BRDQ2G](/img/package/to247.jpg)
APT25GT120BRDQ2G
Trans IGBT Chip N-CH 1200V 54A 347W 3-Pin(3+Tab) TO-247 Tube
![BC847QAPNZ](/img/package/dfn6.jpg)
BC847QAPNZ
Trans GP BJT NPN/PNP 45V 0.1A 350mW Automotive AEC-Q101 6-Pin DFN-B EP T/R
![NDS352AP](/img/package/ssot3.jpg)
NDS352AP
0V 0.9A P-Channel SuperSOT MOSFET Transistor
![APT8015JVFR](/img/package/sot.jpg)
APT8015JVFR
High-power single transistor module APT8015JVFR with 800V voltage rating
![APT8011JFLL](/img/package/sot.jpg)
APT8011JFLL
APT8011JFLL MOSFET with 800V Power and 4-Pin SOT-227 Configuration
![IRFPS37N50APBF](/img/package/to247.jpg)
IRFPS37N50APBF
Transistor MOSFET N-CH 500V 36A 3-Pin TO-274AA T/R
![IRFBC40APBF](/img/package/to220.jpg)
IRFBC40APBF
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB
![APT8015JVR](/img/package/sot.jpg)
APT8015JVR
Product APT8015JVR is an N-channel MOSFET featuring a maximum voltage of 800 volts and a maximum current of 44 amps
![APT28M120B2](/img/package/to247.jpg)
APT28M120B2
Packaged in a T-MAX tube
![APT100M50J](/img/package/sot.jpg)
APT100M50J
APT100M50J represents a discrete semiconductor module utilizing MOSFET components
![KST5401MTF](/img/package/sot23.jpg)
KST5401MTF
0.5A PNP bipolar transistor capable of handling voltages up to 150V, ideal for small signal amplification
![CGH40010P](/img/product.png)
CGH40010P
High-performance RF Mosfet for demanding applicatio
![IXBL64N250](/img/package/sop5.jpg)
IXBL64N250
ISOPLUS I5-PAK Packaged N-Type IGBT Chip Operating at 2500V, Supporting Currents up to 116A, and Handling Power Dissipation of 500000mW
![BSC123N08NS3GATMA1](/img/package/son8.jpg)
BSC123N08NS3GATMA1
Green Plastic Power Field-Effect Transistor with 80V Voltage Rating, 11A Drain Current, 0
![BCP68T1G](/img/package/sot223.jpg)
BCP68T1G
BCP68T1G stands as a Bipolar Transistor with NPN configuration, adept at handling currents up to 1A and voltages up to 20V
![APT50GN60BG](/img/package/to247.jpg)
APT50GN60BG
APT50GN60BG is a Field Stop IGBT with ultra low VCE(ON) that operates at 600V
![SSM6N56FE,LM](/img/package/so5.jpg)
SSM6N56FE,LM
Small-signal N-MOSFET
![IRFR9220TRPBF](/img/package/dpak.jpg)
IRFR9220TRPBF
Vishay IRFR9220TRPBF P-channel MOSFET Transistor, 3.6 A, -200 V, 3-Pin TO-252
![SI1016CX-T1-GE3](/img/package/sc70.jpg)
SI1016CX-T1-GE3
Trans MOSFET N/P-CH 20V 0.6A 6-Pin SC-89 T/R
![IPB020N10N5ATMA1](/img/package/d2pak3.jpg)
IPB020N10N5ATMA1
This MOSFET is an N-channel type suitable for high-power applications