CP30TD1-12A
This module boasts a low power dissipation of 114mW, ensuring efficient operation in various electrical systems
在庫:8,955
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CP30TD1-12A
-
パッケージ/ケース : MODULE
-
Brand : Powerex Inc.
-
Components Classification : IGBT Modules
-
日付シート : CP30TD1-12A データシート (PDF)
概要 CP30TD1-12A
IGBT Module Three Phase Inverter with Brake 600 V 30 A 114 W Through Hole
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Bulk | Product Status | Obsolete |
Configuration | Three Phase Inverter with Brake | Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 30 A | Power - Max | 114 W |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A | Current - Collector Cutoff (Max) | 1 mA |
Input Capacitance (Cies) @ Vce | 2.36 nF @ 10 V | Input | Three Phase Bridge Rectifier |
NTC Thermistor | Yes | Operating Temperature | -20°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Package / Case | 26-DIP Module |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel
BCP56-16T1G
A transistor with an NPN configuration capable of handling currents up to 1.0 A and voltages of 80 V
BCP56-16TX
NPN Bipolar Junction Transistor
BCP5616H6327XTSA1
Transistor with NPN polarity, capable of handling up to 80V and 1A of current, SOT223 package with 2W power dissipation
CPH3362-TL-W
SOT-23 Surface Mount Power MOSFET, Single P-Channel, 100V, 0.7A, 3.7nC
CPH3461-TL-W
MOSFET NCH 350MA 250V 2.5V
FCP16N60
600V N-Channel Power MOSFET in TO-220AB Package
FCP36N60N
TO-220-packaged N-channel Power MOSFET employing SUPREMOS technology for rapid performance, capable of handling up to 600 volts and 36 amps
FCP20N60
The FCP20N60 is a top-tier N-Channel Power MOSFET employing SUPERFET® technology, ensuring efficient and easy drive operations
STD830CP40
Innovative single-package solution for precision applicatio
SI7905DN-T1-GE3
MOSFET SI7923DN-GE3 suggested as a substitute for SI7905DN-T1-GE3
BSP52T1
Bipolar Darlington transistors capable of handling 1A and 80V
IXZ318N50
Silicon N-Channel Metal-oxide Semiconductor FET
FMMT722TA
FMMT722TA is a PNP transistor in SOT23 package, capable of handling up to 70V and 1.5A
MS2473
High-power transistor for RF amplificatio
FDR8305N
N-CH Dual 20V MOSFET in SSOT-8 Package
SI2304BDS-T1-E3
30V MOSFET capable of handling 3.2A with a low resistance of 0.07Ohm
FQP10N20
QFET N-Channel 200V MOSFET
APT50M75JLLU2
The projected end of life for APT50M75JLLU2 with the code CC0059 is October 3, 2048
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications