STD830CP40
Innovative single-package solution for precision applicatio
在庫:5,867
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STD830CP40
-
パッケージ/ケース : DIP-8
-
Brand : STMicroelectronics
-
Components Classification : Bipolar Transistor Arrays
-
日付シート : STD830CP40 データシート (PDF)
-
Series : STD830CP40
概要 STD830CP40
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 400V 3A 3W Through Hole 8-DIP
主な特長
- Low VCE(sat)
- Simplified circuit design
- Reduced component count
- Low spread of dynamic parameters
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | STMicroelectronics | Product Category | Bipolar Transistors - BJT |
RoHS | Details | Mounting Style | Through Hole |
Package / Case | DIP-8 | Transistor Polarity | NPN, PNP |
Configuration | Dual | Collector- Emitter Voltage VCEO Max | 400 V |
Collector- Base Voltage VCBO | 500 V, 700 V | Emitter- Base Voltage VEBO | 10 V, 18 V |
Collector-Emitter Saturation Voltage | 500 mV | Maximum DC Collector Current | 6 A |
Pd - Power Dissipation | 3 W | Maximum Operating Temperature | + 150 C |
Series | STD830CP40 | Brand | STMicroelectronics |
Continuous Collector Current | 3 A | DC Collector/Base Gain hfe Min | 18 at 700 mA, 5 V |
DC Current Gain hFE Max | 34 at 700 mA, 5 V | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.016932 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![STB60NF06T4](/files/uploads/product/s/e1011e646ae147788a62896a65d17c9b.webp)
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
![STD18N55M5](/files/uploads/product/s/220feca3e23a4cfda4f986d3ce00173a.webp)
STD18N55M5
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R
![STL160NS3LLH7](/files/uploads/product/s/9941f218d21b4867b962135c96dc85d4.webp)
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
![STP6NK90ZFP](/files/uploads/product/s/098ecece46424c449de102e359e313f5.webp)
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
![STL3N65M2](/files/uploads/product/s/3d42451657df4883a552ec48de425107.webp)
STL3N65M2
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
![STW18NK80Z](/files/uploads/product/s/785125b54673412e9ee11e02acea937d.webp)
STW18NK80Z
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube
![STD15P6F6AG](/files/uploads/product/s/7d4ecec399f64b8e9093b6b79c339478.webp)
STD15P6F6AG
Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R
![STB100N10F7](/files/uploads/product/s/92f62cf001e44e19806cef13adfcbb59.webp)
STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
![KSC2752OSTU](/files/uploads/product/s/7a8a3585cbaa4f6bac039a600a1eb50a.webp)
KSC2752OSTU
ON Semi KSC2752OSTU NPN Transistor, 500 mA, 400 V, 3-Pin TO-126
![AUIRF4905STRL](/img/package/d2pak3.jpg)
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
![SQJ422EP-T1_GE3](/img/package/power33.jpg)
SQJ422EP-T1_GE3
MOSFET -40V 75A 83W AEC-Q101 Qualified
![CA3102E](/img/package/pdip14.jpg)
CA3102E
Bipolar Transistors - BJT
![NTMFS4983NFT1G](/img/package/so8.jpg)
NTMFS4983NFT1G
Low Power Dissipation of 1.7 Watts at Ambient Temperature
![SI7149DP-T1-GE3](/img/package/power33.jpg)
SI7149DP-T1-GE3
VISHAY - SI7149DP-T1-GE3 - MOSFET, P CH, 30V, 50A, PPAK SO8
![BC639-16ZL1G](/img/package/to92.jpg)
BC639-16ZL1G
BC639-16ZL1G: NPN bipolar transistor with high current
![DMN63D8LV-7](/img/package/sot563.jpg)
DMN63D8LV-7
Diodes Inc DMN63D8LV-7 Dual N-channel MOSFET Transistor, 0.26 A, 30 V, 6-Pin SOT-563
![SI4948BEY-T1-GE3](/img/package/soic8.jpg)
SI4948BEY-T1-GE3
Vishay SI4948BEY-T1-GE3 Dual P-channel MOSFET Transistor, 3.1 A, -60 V, 8-Pin SOIC
![DMG301NU-13](/img/package/sot233.jpg)
DMG301NU-13
Enhanced N-channel MOSFET with a 25-volt drain-source voltage rating, optimized for 8 volts gate-source voltage, and capable of dissipating up to 0
![BCP53T1G](/files/uploads/product/s/a816c34d9420411ca9499c8935cb184b.webp)
BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel
![RD3L150SNTL1](/img/package/dpak.jpg)
RD3L150SNTL1
Transistor for High-Power Fields