CPV362M4U
CPV362M4U boasts a power rating of 23W and is designed for reliable operation in various applications
在庫:7,693
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CPV362M4U
-
パッケージ/ケース : IMS-2
-
Brand : Vishay
-
Components Classification : IGBT Modules
-
日付シート : CPV362M4U データシート (PDF)
概要 CPV362M4U
IGBT Module Three Phase Inverter 600 V 7.2 A 23 W Through Hole IMS-2
主な特長
- Advanced thermal management
- Fast response time
- Low noise operation
- High reliability
応用
- We power plants
- Remote solutions
- Off-grid options
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Modules | Product | IGBT Silicon Modules |
Configuration | Hex | Collector- Emitter Voltage VCEO Max | 600 V |
Continuous Collector Current at 25 C | 7.2 A | Package / Case | IMS-2 |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Vishay | Height | 21.97 mm |
Length | 62.43 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Through Hole | Product Type | IGBT Modules |
Subcategory | IGBTs | Technology | Si |
Width | 7.87 mm |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BCP53T1G](/files/uploads/product/s/a816c34d9420411ca9499c8935cb184b.webp)
BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel
![BCP56-16T1G](/files/uploads/product/s/ad9f078712654ea4b97a180e774bdb73.webp)
BCP56-16T1G
A transistor with an NPN configuration capable of handling currents up to 1.0 A and voltages of 80 V
![BCP56-16TX](/img/package/to3.jpg)
BCP56-16TX
NPN Bipolar Junction Transistor
![BCP5616H6327XTSA1](/img/package/to3.jpg)
BCP5616H6327XTSA1
Transistor with NPN polarity, capable of handling up to 80V and 1A of current, SOT223 package with 2W power dissipation
![CPH3362-TL-W](/img/package/sot23.jpg)
CPH3362-TL-W
SOT-23 Surface Mount Power MOSFET, Single P-Channel, 100V, 0.7A, 3.7nC
![CPH3461-TL-W](/img/package/sot23.jpg)
CPH3461-TL-W
MOSFET NCH 350MA 250V 2.5V
![FCP16N60](/img/package/to220.jpg)
FCP16N60
600V N-Channel Power MOSFET in TO-220AB Package
![FCP36N60N](/img/package/to220.jpg)
FCP36N60N
TO-220-packaged N-channel Power MOSFET employing SUPREMOS technology for rapid performance, capable of handling up to 600 volts and 36 amps
![FCP20N60](/img/package/to220.jpg)
FCP20N60
The FCP20N60 is a top-tier N-Channel Power MOSFET employing SUPERFET® technology, ensuring efficient and easy drive operations
![STD830CP40](/img/package/dip8.jpg)
STD830CP40
Innovative single-package solution for precision applicatio
![BTA16-600CRG](/img/package/to220.jpg)
BTA16-600CRG
TRIAC 600V 16A(RMS) 168A 3-Pin(3+Tab) TO-220AB Tube
![APT12040JVR](/img/package/sot.jpg)
APT12040JVR
Featuring a voltage rating of 1
![IPD200N15N3GATMA1](/img/package/to252.jpg)
IPD200N15N3GATMA1
The IPD200N15N3GATMA1 product boasts a 40% decrease in R DS(on) and a 45% improvement in figure of merit (FOM) compared to its closest competitor
![BSH201,215](/img/package/sot23.jpg)
BSH201,215
BSH201 - P-Channel MOSFET, Small Signal FET, 0.3A, 60V
![FZ1600R12KF4](/img/product.png)
FZ1600R12KF4
N-Channel module-7 with a rating of 1600A I(C) and 1200V V(BR)CES
![IRLR3636PBF](/img/package/dpak.jpg)
IRLR3636PBF
DPAK Package with 3 Pins and 2 Tabs
![IRGPH40F](/img/package/to247.jpg)
IRGPH40F
High durability IGBT chip component
![IXFN200N07](/img/package/sot.jpg)
IXFN200N07
The IXFN200N07 is designed for high-power applications with its impressive specifications and N-channel configuration
![MMBFJ175LT1G](/img/package/sot23.jpg)
MMBFJ175LT1G
The purpose of this P-channel JFET device is for analog switching and chopper applications
![DMG3406L-13](/img/package/sot23.jpg)
DMG3406L-13
The DMG3406L-13 is a high-performance N-Channel MOSFET