FDB33N25TM
UniFETTM N-Channel Power MOSFET rated for 250 volts, 33 amps, and with an on-state resistance of 94 milliohms, housed in a D2PAK package
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.798 | $1.80 |
10 | $1.548 | $15.48 |
30 | $1.392 | $41.76 |
100 | $1.232 | $123.20 |
500 | $1.096 | $548.00 |
800 | $1.065 | $852.00 |
在庫:5,803
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDB33N25TM
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パッケージ/ケース : D2PAK-3
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Brand : Onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDB33N25TM データシート (PDF)
概要 FDB33N25TM
Step into the future of high voltage MOSFET technology with the FDB33N25TM UniFETTM MOSFET by Fairchild Semiconductor. Utilizing cutting-edge planar stripe and DMOS technology, this MOSFET is designed to minimize on-state resistance, enhance switching performance, and bolster avalanche energy strength. It's tailor-made for switching power converter applications such as power factor correction, flat panel display TV power, ATX, and electronic lamp ballasts, embodying a new era of efficiency and reliability
主な特長
- Fast switching speed
- Low input capacitance (Typ. 1.5pF)
- High current handling
- Excellent frequency response
応用
- Best for all uses
- Great for any project
- Perfect for various tasks
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Status | Active | Compliance | PbAHP |
Package Type | D2PAK-3 / TO-263-2 | Case Outline | 418AJ |
MSL Type | 1 | MSL Temp (°C) | 245 |
Container Type | REEL | Container Qty. | 800 |
ON Target | Y | Channel Polarity | N-Channel |
Configuration | Single | V(BR)DSS Min (V) | 250 |
VGS Max (V) | ±30 | VGS(th) Max (V) | 5 |
ID Max (A) | 33 | PD Max (W) | 235 |
RDS(on) Max @ VGS = 10 V (mΩ) | 94 | Qg Typ @ VGS = 10 V (nC) | 36.8 |
Ciss Typ (pF) | 1640 | Pricing ($/Unit) | $0.9402Sample |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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