• packageimg
packageimg

FDMA1023PZ

Trans MOSFET P-CH 20V 3.7A 6-Pin WDFN EP T/R

在庫：6,475

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください FDMA1023PZ このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 FDMA1023PZ

Whether you're working on a cellular handset or another ultraportable device, the FDMA1023PZ offers a comprehensive solution for the battery charge switch. Equipped with two independent P-Channel MOSFETs and low on-state resistance, this device ensures minimal conduction losses. Its common source configuration enables bi-directional current flow, adding flexibility to its usage. Additionally, the MicroFET 2X2 package delivers exceptional thermal performance, making it a top choice for linear mode applications

主な特長

  • Fast Transient Response
  • Low Capacitance
  • EMI/RFI Immunity

応用

  • Perfect for a wide range of uses.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMA1023PZ Product Status Active
Technology Si Configuration Dual
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.7A Rds On (Max) @ Id, Vgs 72mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Package / Case MicroFET-6 Supplier Device Package 6-MicroFET (2x2)
Base Product Number FDMA1023 Manufacturer onsemi
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 3.7 A Rds On - Drain-Source Resistance 72 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 12 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.5 W
Channel Mode Enhancement Tradename PowerTrench
Brand onsemi / Fairchild Fall Time 12 ns
Forward Transconductance - Min 12 S Height 0.75 mm
Length 2 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 P-Channel Typical Turn-Off Delay Time 64 ns
Typical Turn-On Delay Time 9 ns Width 2 mm
Unit Weight 0.001411 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

MRF177

MRF177

Heavy-duty radio frequency (RF) transistor offering exceptional performance in demanding environment
AON7422G

AON7422G

N-Channel MOSFET rated for 30V, identified by the code AON7422G
BSM35GD120DN2

BSM35GD120DN2

Product BSM35GD120DN2 is a N-channel IGBT module designed for high voltage applications
IXTP48N20T

IXTP48N20T

Discrete MOSFET with 48A and 200V ratings in N-channel configuration
FJL6920TU

FJL6920TU

The FJL6920TU belongs to the FJL6920 Series
SIA975DJ-T1-GE3

SIA975DJ-T1-GE3

12 V Dual P-Channel MOSFET (D-S)
SI2304DS

SI2304DS

With a power dissipation rating of 1
ON5040

ON5040

ON5040 - RF POWER TRANSISTOR (AM
IRFS3107PBF

IRFS3107PBF

N-Channel MOSFET IRFS3107PBF from INFINEON, featuring 75V voltage capacity and D2PAK enclosure
BSM150GB120DN2F

BSM150GB120DN2F

Modules IGBT 1200V 150A IGBT