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FDMA1027P

Trans MOSFET P-CH 20V 3A 6-Pin WDFN EP T/R

在庫：8,574

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見積もりリクエストを送信してください FDMA1027P このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 FDMA1027P

The FDMA1027P is a versatile device that serves as an all-in-one solution for the battery charge switch in mobile phones and other portable gadgets. With two independent P-Channel MOSFETs, this product ensures minimal conduction losses thanks to its low on-state resistance. By utilizing the common source configuration, bi-directional current flow becomes possible, enhancing the device's functionality

主な特長

  • -3.0 A, -20V
  • RDS(ON) = 120 mΩ @ VGS = -4.5 V
  • RDS(ON) = 160 mΩ @ VGS = -2.5 V
  • RDS(ON) = 240 mΩ @ VGS = -1.8 V
  • Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm
  • RoHS compliant
  • Free from halogenated compounds and antimonyoxides

応用

  • This product is general usage and suitable for many different applications.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMA1027P Product Status Active
Technology Si Configuration Dual
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V Power - Max 800mW
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Package / Case MicroFET-6 Supplier Device Package 6-MicroFET (2x2)
Base Product Number FDMA1027 Manufacturer onsemi
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 2.2 A Rds On - Drain-Source Resistance 120 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1.3 V
Qg - Gate Charge 6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.4 W
Channel Mode Enhancement Tradename PowerTrench
Brand onsemi / Fairchild Fall Time 11 ns
Height 0.75 mm Length 2 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 11 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 P-Channel
Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 9 ns
Width 2 mm Unit Weight 0.001411 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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