FDMC007N30D
Trans MOSFET N-CH 30V 10A/16A 8-Pin WDFN EP T/R
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部品番号 : FDMC007N30D
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パッケージ/ケース : WDFN EP
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Brand : onsemi
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Components Classification : FET, MOSFET Arrays
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日付シート : FDMC007N30D データシート (PDF)
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Series : FDMC007N30D
概要 FDMC007N30D
The FDMC007N30D is a state-of-the-art device that features two specialized N-Channel MOSFETs in a dual power33 package. The compact 3mm X 3mm MLP package makes it an ideal choice for space-constrained applications. With the switch node internally connected, it makes placement and routing of synchronous buck converters a breeze. The control MOSFET (Q1) and synchronous MOSFET (Q2) are meticulously designed to deliver optimal power efficiency, ensuring that your power conversion applications run with maximum efficiency and minimum wastage
主な特長
- High-Speed
Max fT = 4 kHz at VCC = 5V, IO = 2 mA - Low-Power
Max rDS(on) = 1.8 mΩ at VGS = 10V, ID = 6 A - Eco-Friendly
RoHS Compliant, Halogen-Free, Lead-Free - High-Temperature
Max TJ = 150°C at VCC = 5V, IO = 1 mA - Low-Voltage
Max rDS(on) = 2.7 mΩ at VGS = 3V, ID = 4 A - Surge Protection
Max VBURST = 1000V at TJ = 25°C, RL = 10Ω
応用
- Great for all occasions.
- Perfect for any task.
- Versatile and reliable choice.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Technology | Si |
Configuration | Dual | Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 46A | Rds On (Max) @ Id, Vgs | 11.6mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1110pF @ 15V, 2360pF @ 15V | Power - Max | 1.9W, 2.5W |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Package / Case | Power-33-8 | Supplier Device Package | 8-Power33 (3x3) |
Base Product Number | FDMC007 | Manufacturer | onsemi |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 29 A, 46 A | Rds On - Drain-Source Resistance | 11.6 mOhms, 6.4 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 17 nC, 34 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Series | FDMC007N30D |
Brand | onsemi / Fairchild | Height | 0.8 mm |
Length | 3 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Width | 3 mm | Unit Weight | 0.006561 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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