FDMC013P030Z
FDMC013P030Z ON Semiconductor Transistors MOSFETs P-CH 30V 14A 8-Pin WDFN EP T/R - Arrow.com
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部品番号 : FDMC013P030Z
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パッケージ/ケース : WDFN EP
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDMC013P030Z データシート (PDF)
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Series : FDMC013P030Z
概要 FDMC013P030Z
The FDMC013P030Z P-Channel MOSFET sets a new standard in power electronics with its innovative design and advanced features. Engineered using the latest PowerTrench technology, this MOSFET excels in reducing rDS(on) and enhancing switching performance, making it a preferred choice for various applications. Its rugged construction ensures durability and reliability, while its optimized design guarantees efficient power management. Trust the FDMC013P030Z to deliver superior performance and uncompromising quality in your electronic systems
主な特長
- Max rDS(on) = 7.0 mΩ at VGS = -10 V, ID = -14 A
- Max rDS(on) = 12.0 mΩ at VGS = -4.5 V, ID = -10 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used Surface Mount Package
- Termination is Lead-free and RoHS Compliant
- HBM ESD Capability Level> 4 kV Typical (Note 4)
応用
- This product is general usage and suitable for many different applications.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | FET Type | P-Channel |
Technology | Si | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 54A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 7mOhm @ 14A, 10V | Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V | Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 5785 pF @ 15 V | Power Dissipation (Max) | 30W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | 8-MLP (3.3x3.3) | Package / Case | Power-33-8 |
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 54 A |
Rds On - Drain-Source Resistance | 12 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 135 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 30 W | Channel Mode | Enhancement |
Series | FDMC013P030Z | Brand | onsemi / Fairchild |
Configuration | Single | Height | 0.8 mm |
Length | 3.3 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Width | 3.3 mm | Unit Weight | 0.005832 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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