FDMC2610
Trans MOSFET N-CH Si 200V 2.2A 8-Pin WDFN EP T/R
在庫:5,963
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- 365日の品質保証
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部品番号 : FDMC2610
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パッケージ/ケース : WDFN EP
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDMC2610 データシート (PDF)
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Series : FDMC2610
概要 FDMC2610
This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.
主な特長
- Fast Turn-On Time - Ton = 50ns
- High Surge Withstanding Capability - IC = 10A
- Low Noise Figure - FNOISE = 3dB @ 1GHz
応用
- This product is versatile.
- Great for various uses.
- Perfect for multiple tasks.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | FDMC2610 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta), 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 200mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 100 V |
Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | 8-MLP (3.3x3.3) |
Package / Case | Power-33-8 | Base Product Number | FDMC26 |
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 9.5 A |
Rds On - Drain-Source Resistance | 200 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 18 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.1 W | Channel Mode | Enhancement |
Tradename | UltraFET | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 16 ns |
Forward Transconductance - Min | 7 S | Height | 0.8 mm |
Length | 3.3 mm | Product Type | MOSFET |
Rise Time | 13 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 29 ns |
Typical Turn-On Delay Time | 17 ns | Width | 3.3 mm |
Unit Weight | 0.005832 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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