FDMC8296
Reliable and efficient Power--MOSFETs suitable for harsh environment
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.203 | $2.20 |
| 200 | $0.853 | $170.60 |
| 500 | $0.823 | $411.50 |
| 1000 | $0.809 | $809.00 |
在庫：9,639
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDMC8296
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パッケージ/ケース : WDFN EP
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDMC8296 データシート (PDF)
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Series : FDMC8296
概要 FDMC8296
The FDMC8296 is a high-performance N-Channel MOSFET designed for Power Management and load switching applications. Utilizing an advanced Power Trench® process, this MOSFET is optimized to minimize on-state resistance, making it an ideal choice for notebook computers and portable battery packs. Its superior performance and efficiency make it well-suited for demanding power applications where low power dissipation and high efficiency are critical
主な特長
- High-speed switching for reliable performance
- Ultra-low leakage current for reduced power consumption
- Robust design for increased surge immunity
- Surface-mountable package for enhanced flexibility
- Operating temperature range -40 to 150°C
- Compliant with AEC-Q101 standard for automotive applications
応用
- Great for all your needs
- Perfect for any project
- Versatile and reliable
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | FDMC8296 | Product Status | Obsolete |
| FET Type | N-Channel | Technology | Si |
| Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 8mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1385 pF @ 15 V |
| Power Dissipation (Max) | 2.3W (Ta), 27W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | 8-MLP (3.3x3.3) |
| Package / Case | Power-33-8 | Base Product Number | FDMC82 |
| Manufacturer | onsemi | Product Category | MOSFET |
| RoHS | Details | Mounting Style | SMD/SMT |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 12 A |
| Rds On - Drain-Source Resistance | 6.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 23 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.3 W | Channel Mode | Enhancement |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 2 ns | Forward Transconductance - Min | 44 S |
| Height | 0.8 mm | Length | 3.3 mm |
| Product Type | MOSFET | Rise Time | 3 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 9 ns | Width | 3.3 mm |
| Unit Weight | 0.007408 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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