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FDMC86261P

Trans MOSFET P-CH 150V 2.7A 8-Pin WDFN EP T/R

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概要 FDMC86261P

The FDMC86261P P-Channel MOSFET stands out as a premium product that leverages the exceptional PowerTrench® technology to achieve unparalleled performance. Its very high density process is specifically designed to minimize on-state resistance and enhance switching performance, setting it apart as a top-choice solution for power management applications. Whether it's for high-power industrial equipment or energy-efficient consumer electronics, this MOSFET delivers the reliability and efficiency needed for demanding usage

主な特長

  • Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
  • Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
  • Very low RDS(on) mid voltage P channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL Tested
  • RoHS Compliant

応用

  • Industrial
  • Portable and Wireless

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMC86261P Product Status Active
FET Type P-Channel Technology Si
Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 160mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 75 V
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3)
Package / Case Power-33-8 Base Product Number FDMC86261
Manufacturer onsemi Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 150 V Id - Continuous Drain Current 2.7 A
Rds On - Drain-Source Resistance 269 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 24 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 40 W Channel Mode Enhancement
Tradename PowerTrench Brand onsemi / Fairchild
Configuration Single Fall Time 20 ns
Height 0.8 mm Length 3.3 mm
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 20 ns Width 3.3 mm
Unit Weight 0.005832 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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